A review on metastable silicon allotropes

L Fan, D Yang, D Li - Materials, 2021 - mdpi.com
Diamond cubic silicon is widely used for electronic applications, integrated circuits, and
photovoltaics, due to its high abundance, nontoxicity, and outstanding physicochemical …

Crystal phase effects in Si nanowire polytypes and their homojunctions

M Amato, T Kaewmaraya, A Zobelli, M Palummo… - Nano …, 2016 - ACS Publications
Recent experimental investigations have confirmed the possibility to synthesize and exploit
polytypism in group IV nanowires. Driven by this promising evidence, we use first-principles …

Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressure

NV Morozova, IV Korobeinikov, NV Abrosimov… - …, 2020 - pubs.rsc.org
Silicon, germanium and their alloys are classical semiconductors that play an important role
in fundamental sciences and are the basis for modern microelectronics, optoelectronics …

The phase selection law in the growth of hexagonal diamond silicon nanowires by controlling chemical potential

L Fan, N Zhao, D Yang, D Li - Micro and Nanostructures, 2023 - Elsevier
Large-scale and whole hexagonal diamond silicon nanowires (h-SiNWs) were synthesized
with aluminum-gold (Al–Au) alloy-catalytic assistance to reduce the nucleation barrier by …

Insights into the growth of hexagonal Si crystals using Al-based nano absorber

KH Kim, GS Lee, HS Ahn, JH Lee, J Kim… - Semiconductor …, 2022 - iopscience.iop.org
Abstract Although hexagonal (2H) silicon (Si) semiconductors exhibit excellent optical
properties owing to their quasi-direct bandgap, their growth conditions, which require …

Pressure-induced phase transition and fracture in α-MoO3 nanoribbons

JV Silveira, LL Vieira, AL Aguiar, PTC Freire… - … Acta Part A: Molecular …, 2018 - Elsevier
MoO 3 nanoribbons were studied under different pressure conditions ranging from 0 to 21
GPa at room temperature. The effect of the applied pressure on the spectroscopic and …

Band gap modulation and indirect to direct band gap transition in ZnS/Si and Si/ZnS core/shell nanowires

SU Rehman, ZY Li, HM Li, ZJ Ding - Physica B: Condensed Matter, 2017 - Elsevier
An investigation on the electronic structure and band gap nature of hydrogen passivated
wurtzite ZnS/Si and Si/ZnS core/shell nanowires (CSNWs) in the [0001] direction has been …

Multi-scale characterization of hexagonal Si-4H: a hierarchical nanostructured material

S Pandolfi, S Zhao, J Turner, P Ercius, C Song… - arxiv preprint arxiv …, 2021 - arxiv.org
In this work we present a detailed structural characterization of Si-4H, a newly discovered
bulk form of hexagonal silicon (Si) with potential optoelectronic applications. Using multi …

Crystal Phase Engineering in III-V Semiconductor Films: From Epitaxy to Devices

P Staudinger - 2020 - infoscience.epfl.ch
Crystal phase engineering is an exciting pathway to enhance the properties of conventional
semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices …

[HTML][HTML] Light Emitting Properties of Si Micro Single Crystal Grown by Mixed-Source HVPE Method

KH Kim, GS Lee, JH Park, SY Kim, AHN Soo, JH Lee… - 2021 - npsm-kps.org
The light-emitting property of Si micro single crystals was investigated. A Si micro single
crystal grown by using the atmospheric-pressure, mixed-source hydride vapor phase epitaxy …