A review on metastable silicon allotropes
L Fan, D Yang, D Li - Materials, 2021 - mdpi.com
Diamond cubic silicon is widely used for electronic applications, integrated circuits, and
photovoltaics, due to its high abundance, nontoxicity, and outstanding physicochemical …
photovoltaics, due to its high abundance, nontoxicity, and outstanding physicochemical …
Crystal phase effects in Si nanowire polytypes and their homojunctions
Recent experimental investigations have confirmed the possibility to synthesize and exploit
polytypism in group IV nanowires. Driven by this promising evidence, we use first-principles …
polytypism in group IV nanowires. Driven by this promising evidence, we use first-principles …
Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressure
Silicon, germanium and their alloys are classical semiconductors that play an important role
in fundamental sciences and are the basis for modern microelectronics, optoelectronics …
in fundamental sciences and are the basis for modern microelectronics, optoelectronics …
The phase selection law in the growth of hexagonal diamond silicon nanowires by controlling chemical potential
L Fan, N Zhao, D Yang, D Li - Micro and Nanostructures, 2023 - Elsevier
Large-scale and whole hexagonal diamond silicon nanowires (h-SiNWs) were synthesized
with aluminum-gold (Al–Au) alloy-catalytic assistance to reduce the nucleation barrier by …
with aluminum-gold (Al–Au) alloy-catalytic assistance to reduce the nucleation barrier by …
Insights into the growth of hexagonal Si crystals using Al-based nano absorber
KH Kim, GS Lee, HS Ahn, JH Lee, J Kim… - Semiconductor …, 2022 - iopscience.iop.org
Abstract Although hexagonal (2H) silicon (Si) semiconductors exhibit excellent optical
properties owing to their quasi-direct bandgap, their growth conditions, which require …
properties owing to their quasi-direct bandgap, their growth conditions, which require …
Pressure-induced phase transition and fracture in α-MoO3 nanoribbons
MoO 3 nanoribbons were studied under different pressure conditions ranging from 0 to 21
GPa at room temperature. The effect of the applied pressure on the spectroscopic and …
GPa at room temperature. The effect of the applied pressure on the spectroscopic and …
Band gap modulation and indirect to direct band gap transition in ZnS/Si and Si/ZnS core/shell nanowires
An investigation on the electronic structure and band gap nature of hydrogen passivated
wurtzite ZnS/Si and Si/ZnS core/shell nanowires (CSNWs) in the [0001] direction has been …
wurtzite ZnS/Si and Si/ZnS core/shell nanowires (CSNWs) in the [0001] direction has been …
Multi-scale characterization of hexagonal Si-4H: a hierarchical nanostructured material
In this work we present a detailed structural characterization of Si-4H, a newly discovered
bulk form of hexagonal silicon (Si) with potential optoelectronic applications. Using multi …
bulk form of hexagonal silicon (Si) with potential optoelectronic applications. Using multi …
Crystal Phase Engineering in III-V Semiconductor Films: From Epitaxy to Devices
P Staudinger - 2020 - infoscience.epfl.ch
Crystal phase engineering is an exciting pathway to enhance the properties of conventional
semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices …
semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices …
[HTML][HTML] Light Emitting Properties of Si Micro Single Crystal Grown by Mixed-Source HVPE Method
KH Kim, GS Lee, JH Park, SY Kim, AHN Soo, JH Lee… - 2021 - npsm-kps.org
The light-emitting property of Si micro single crystals was investigated. A Si micro single
crystal grown by using the atmospheric-pressure, mixed-source hydride vapor phase epitaxy …
crystal grown by using the atmospheric-pressure, mixed-source hydride vapor phase epitaxy …