The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy
Z Yang, Y Li, M Huang, M Gong, Y Ma - Microelectronics Reliability, 2024 - Elsevier
The evolution of deep levels in n-type 4H-SiC Schottky barrier diodes (SBDs) irradiated with
9.5 MeV/u 209 Bi ions at room temperature was investigated by Deep Level Transient …
9.5 MeV/u 209 Bi ions at room temperature was investigated by Deep Level Transient …
The effect of the interfacial states by swift heavy ion induced atomic migration in 4H-SiC Schottky barrier diodes
Z Yang, F Lan, Y Li, M Gong, M Huang, B Gao… - Nuclear Instruments and …, 2018 - Elsevier
The effects of the atomic migration between metal and semiconductor by swift heavy ion
(SHI) irradiation on the turn on voltage (V on), ideality factor (n) and Schottky barrier height …
(SHI) irradiation on the turn on voltage (V on), ideality factor (n) and Schottky barrier height …
Recovery at room temperature annealing on 4H–SiC SBDs by gamma irradiation
Y Li, M Gong, M Huang, Y Ma, Z Yang - Materials Science in Semiconductor …, 2024 - Elsevier
The impact of gamma irradiation and subsequent recovery at room temperature on the
device performance of commercial 4H–SiC Schottky barrier diodes (SBDs) was investigated …
device performance of commercial 4H–SiC Schottky barrier diodes (SBDs) was investigated …
Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes
Co-60 gamma irradiation of SiC merged-PiN Schottky (MPS) diodes up to fluences of 1 Mrad
(Si) produces increases in both forward and reverse current, with less damage when the …
(Si) produces increases in both forward and reverse current, with less damage when the …
Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes
The paper explores the Deep Level Transient Fourier Spectroscopy (DLTFS) capabilities in
characterizing electrically active traps in vertical GaN-on-GaN Schottky barrier diodes …
characterizing electrically active traps in vertical GaN-on-GaN Schottky barrier diodes …
Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over wide temperature range
Thermal annealing effects on electrical characteristics of Ni/4H-SiC and Ti/4H-SiC Schottky
barrier diodes (SBDs) are investigated in the temperature range of 400–1100° C. The …
barrier diodes (SBDs) are investigated in the temperature range of 400–1100° C. The …
Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation
M He, X Dong, M **ang, Y Ma, M Huang… - Nuclear Instruments and …, 2024 - Elsevier
In this work, the irradiation effects of 1200 V commercial silicon carbon (SiC) Junction Barrier
Schottky Diodes (JBSs) were thoroughly studied at multiple irradiation conditions by …
Schottky Diodes (JBSs) were thoroughly studied at multiple irradiation conditions by …
Accurate TCAD Simulation Model for High Performance 4H-SiC Alpha-particle Detectors
V Jaiswal, PV Raja - IEEE Transactions on Nuclear Science, 2024 - ieeexplore.ieee.org
A systematic calibration procedure is carried out to accurately model the state-of-the-art
experimental I–V and charge collection efficiency (CCE) of a 4-hexagonal silicon carbide …
experimental I–V and charge collection efficiency (CCE) of a 4-hexagonal silicon carbide …
The performance simulation of the LiH-SiC-based fast neutron detector for harsh environment monitoring using Geant4 and TCAD
S Tripathi, C Upadhyay, CP Nagaraj… - Nuclear Instruments and …, 2019 - Elsevier
Abstract In this work, Lithium Hydride (LiH) and Silicon Carbide (SiC) based sensor for fast
neutron detection has been reported for the first time. LiH is used as a hydrogenous …
neutron detection has been reported for the first time. LiH is used as a hydrogenous …
Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes
The electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes are identified
by deep-level transient Fourier spectroscopy (DLTFS). The junction termination extension …
by deep-level transient Fourier spectroscopy (DLTFS). The junction termination extension …