Diffusion of Sb in relaxed Si1−xGex
AN Larsen, P Kringho/j - Applied physics letters, 1996 - pubs.aip.org
Diffusion of antimony in relaxed Si1− x Ge x alloy layers grown by molecular beam epitaxy
has been studied as a function of the composition for 0≤ x≤ 0.5. The diffusivity of antimony …
has been studied as a function of the composition for 0≤ x≤ 0.5. The diffusivity of antimony …
MeV ion implantation induced damage in relaxed
The damage produced by implanting, at room temperature, 3-μm-thick relaxed Si 1− x Ge x
alloys of high crystalline quality with 2 MeV Si+ ions has been studied as a function of Ge …
alloys of high crystalline quality with 2 MeV Si+ ions has been studied as a function of Ge …
2 MeV Si ion implantation damage in relaxed Si1− xGex
The damage produced by implanting, at room temperature, 3 μm thick relaxed Si1− xGex
layers with 2 MeV Si+ ions has been measured as a function of Ge content (x= 0.04, 0.13 …
layers with 2 MeV Si+ ions has been measured as a function of Ge content (x= 0.04, 0.13 …
Rapid thermal annealing of arsenic implanted relaxed Si1− xGex
The electrical activity and redistribution during rapid thermal annealing (RTA) of high
concentrations of As implanted into epitaxially grown, relaxed Si1− xGex for x≤ 0.5 have …
concentrations of As implanted into epitaxially grown, relaxed Si1− xGex for x≤ 0.5 have …
Ion implantation induced damage in relaxed Si/sub 1-x/Ge/sub x
RC Barklie, C O'Raifeartaigh… - Proceedings of 11th …, 1996 - ieeexplore.ieee.org
Relaxed Si/sub 1-x/Ge/sub x/layers with germanium contents of 0.04, 0.13, 0.24 and 0.36
have been grown by MBE and implanted under tightly controlled conditions with 2 MeV …
have been grown by MBE and implanted under tightly controlled conditions with 2 MeV …