Propagation of amorphous oxide nanowires via the VLS mechanism: Growth kinetics
D Shakthivel, WT Navaraj, S Champet… - Nanoscale …, 2019 - pubs.rsc.org
This work reports the growth kinetics of amorphous nanowires (NWs) developed by the
vapour–liquid–solid (VLS) mechanism. The model presented here incorporates all atomistic …
vapour–liquid–solid (VLS) mechanism. The model presented here incorporates all atomistic …
Thermally induced surface faceting on heteroepitaxial layers
Heteroepitaxial semiconductors such as Ge-on-Si are widely used in current opto-electronic
and electronic applications, and one of the most important challenges for epitaxial Ge-on-Si …
and electronic applications, and one of the most important challenges for epitaxial Ge-on-Si …
Growth of Au capped GeO2 nanowires for visible-light photodetection
Growth of Au capped GeO2 nanowires for visible-light photodetection | Applied Physics Letters |
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AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt Text Close Publishers AIP …
Formation, evolution, and prevention of thermally induced defects on germanium and silicon upon high-temperature vacuum annealing
This Letter reports the formation, evolution, and prevention of thermally induced defects on
germanium upon high-temperature (up to 890 C) vacuum ( 2× 10− 6 Torr or 2.67× 10− 6 …
germanium upon high-temperature (up to 890 C) vacuum ( 2× 10− 6 Torr or 2.67× 10− 6 …
Controlled lateral growth of silica nanowires and coaxial nanowire heterostructures
Silica nanowires, grown on gold-coated silicon substrates by the active oxidation of silicon,
are shown to undergo an initial stage of rapid longitudinal growth, followed by a stage of …
are shown to undergo an initial stage of rapid longitudinal growth, followed by a stage of …
The effect of annealing temperature, residual O2 partial pressure, and ambient flow rate on the growth of SiO x nanowires
The active oxidation of a metal-coated Si substrate offers a convenient method to grow
dense silica nanowire films directly on the substrate surface. In this study we investigate the …
dense silica nanowire films directly on the substrate surface. In this study we investigate the …
Unusually-high growth rate (∼ 2.8 μm/s) of germania nanowires and its hierarchical structures by an in-situ continuous precursor supply
Low-dimensional nanostructured semiconductors are becoming the promising materials for
high-performance nanophotonics, nanoelectronics, and quantum devices. To enable these …
high-performance nanophotonics, nanoelectronics, and quantum devices. To enable these …
Metal Oxide Nanowire Growth via Intermediate Hydroxide Formation: A Thermochemical Assessment
In this study we apply reaction thermodynamics to show that a significant volatile hydroxide
vapor partial pressure forms at a metal-oxide interface and is a likely precursor source for …
vapor partial pressure forms at a metal-oxide interface and is a likely precursor source for …