Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …

The past decade has seen rapid progress in research into high-performance Ge-on-Si
photodetectors. Owing to their excellent optoelectronic properties, which include high …

In recent years, optical modulators, photodetectors,(de) multiplexers, and heterogeneously
integrated lasers based on silicon optical platforms have been verified. The performance of …

Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first
material used in such devices. During the 1950s, just after the birth of the transistor, solid …

Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …

This article reviews the history and current progress in high-mobility strained Si, SiGe, and
Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by …

The realization of semiconductor laser diodes on Si substrates would permit the creation of
complex optoelectronic circuits, enabling chip-to-chip and system-to-system optical …

Silicon solar cells are the most established solar cell technology and are expected to
dominate the market in the near future. As state-of-the-art silicon solar cells are approaching …

Although conventional homoepitaxy forms high-quality epitaxial layers,,,–, the limited set of
material systems for commercially available wafers restricts the range of materials that can …