This review provides numerical and graphical information about many (but by no means all)
of the physical and electronic properties of GaAs that are useful to those engaged in …

Local mechanical stress is currently an important topic of concern in microelectronics
processing. A technique that has become increasingly popular for local mechanical stress …

Ni-based hydrogen oxidation reaction (HOR) electrocatalysts are promising anode materials
for the anion exchange membrane fuel cells (AEMFCs), but their application is hindered by …

We uncover the constitutive relation of graphene and probe the physics of its optical
phonons by studying its Raman spectrum as a function of uniaxial strain. We find that the …

Small physical dimensions of the scattering crystals lead to a downshift and broadening of
the first order Raman line through a relaxation of the q= 0 selection rule. We consider the …

Carbon nanotubes are exceptionally interesting from a fundamental research point of view.
Many concepts of one-dimensional physics have been verified experimentally such as …

Since the appearance of our book, Fundamentals of Semiconductors: Physics and Materials
Properties, one of the questions we are asked most frequently is this:“is there a solution …

In strained mechanical resonators, the concurrence of tensile stress and geometric
nonlinearity dramatically reduces dissipation. This phenomenon, called dissipation dilution …

The strain distribution in and around pyramidal InAs/GaAs quantum dots (QD's) on a thin
wetting layer fabricated recently with molecular-beam epitaxy, is simulated numerically. For …

The Al x Ga 1− x As/GaAs heterostructure system is potentially of great importance for many
high-speed electronics and optoelectronic devices, because the lattice parameter difference …