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Recent progress in long‐wavelength InGaN light‐emitting diodes from the perspective of epitaxial structure
X Zhao, K Sun, S Cui, B Tang, H Hu… - Advanced Photonics …, 2023 - Wiley Online Library
Over the last decades, continuous technological advancements have been made in III‐
nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement …
nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement …
Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots
III-nitride quantum dots (QDs) are a promising system actively studied for their ability to
maintain single photon emission up to room temperature. Here, we report on the evolution of …
maintain single photon emission up to room temperature. Here, we report on the evolution of …
Nanometer scale spectral imaging of quantum emitters in nanowires and its correlation to their atomically resolved structure
We report the spectral imaging in the UV to visible range with nanometer scale resolution of
closely packed GaN/AlN quantum disks in individual nanowires using an improved custom …
closely packed GaN/AlN quantum disks in individual nanowires using an improved custom …
Ultraviolet photodetector based on GaN/AlN quantum disks in a single nanowire
We report the demonstration of single-nanowire photodetectors relying on carrier generation
in GaN/AlN QDiscs. Two nanowire samples containing QDiscs of different thicknesses are …
in GaN/AlN QDiscs. Two nanowire samples containing QDiscs of different thicknesses are …
Selective-area growth of thin GaN nanowires by MOCVD
We report the selective-area growth (SAG) of Ga-polar thin GaN nanowires on patterned
GaN/sapphire (0001) substrates using metalorganic chemical vapor deposition (MOCVD) …
GaN/sapphire (0001) substrates using metalorganic chemical vapor deposition (MOCVD) …
Recent advances and challenges in indium gallium nitride (inxga1-xn) materials for solid state lighting
In recent times, the demand for electrical energy is increased to such an extent that the
scientific research has to be focused on the development of materials that fulfil the growing …
scientific research has to be focused on the development of materials that fulfil the growing …
Structural and optical properties of InGaN/GaN nanowire heterostructures grown byPA-MBE
The structural and optical properties of InGaN/GaN nanowire heterostructures grown by
plasma-assisted molecular beam epitaxy have been studied using a combination of …
plasma-assisted molecular beam epitaxy have been studied using a combination of …
[HTML][HTML] Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm
We report AlGaN nanowire light emitting diodes (LEDs) operating in the ultraviolet-C band.
The LED structures are grown by molecular beam epitaxy on Si substrate. It is found that …
The LED structures are grown by molecular beam epitaxy on Si substrate. It is found that …
Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si (111)
Based on the breakdown of Friedel's law, resonant x-ray diffraction is shown to be a suitable
method to determine polarity of non-centrosymmetrical wurtzite gallium nitride (GaN) …
method to determine polarity of non-centrosymmetrical wurtzite gallium nitride (GaN) …
Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence
Almost all electronic devices utilize a pn junction formed by random do** of donor and
acceptor impurity atoms. We developed a fundamentally new type of pn junction not formed …
acceptor impurity atoms. We developed a fundamentally new type of pn junction not formed …