GaN nanostructures have been extensively studied due to their important properties and
applications in many fields. The recent synthesis and uses of these nanostructures have …

Despite the numerous reports on the metal-catalyzed growth of GaN nanowires, the
mechanism of growth is not well understood. Our study of the nickel-assisted growth of GaN …

With the increasing attention dedicated to GaN nanowires for the realization of advanced
optoelectronic devices, important efforts have been devoted to the nanowire growth …

GaN nanowires with exceptional lengths are synthesized by vapor–liquid–solid coupled with
near-equilibrium hydride vapor phase epitaxy technique on c-plane sapphire substrates …

Au droplets are used as a catalyst for the growth of nanowires on Si (111) substrate via the
vapor–liquid–solid (VLS) mechanism. The dewetting of a Au thin film is the most common …

Gallium nitride (GaN) nanosheets have been prepared as an active material for conquering
polysulfides in Lithium–Sulfur (Li–S) batteries via one simple synthetic route at 550° C. The …

To extend the availability of nanostructure-based optoelectronic applications, vertically
elongated nanorods with precisely controlled morphology are required. For group III nitrides …

Recently, horizontal nanowires (NWs) have attracted much attention due to their increased
compatibility with NW-based integrated nanoelectronic and nanophotonic systems …

The optical and electrical properties of nitride materials are closely related to their
crystallographic orientation. Here, we report our effort on crystallographic orientation …

We demonstrate the possibility to cover the surface of GaP and InP porous structures by a
self-assembled monolayer of electrochemically deposited nanoscale Au nanodots. After …