Despite the tremendous progress on wide-bandgap materials in the last few decades,
devices made of these materials are still far from their maximum theoretical performance …

In this study, we present an investigation of the spontaneous and piezoelectric polarization
in the ε-(Al x Ga 1–x) 2 O 3/ε-Ga 2 O 3 heterostructures using density functional theory …

The bowing of the energy of the three lowest band-to-band transitions in β-(Al x Ga 1− x) 2 O
3 alloys is resolved using a combined density-functional theory (DFT) and generalized …

Abstract α-(Al x Ga 1− x) 2 O 3 alloys have attracted increasing interest as semiconductors
with tunable wide band gaps. We report a systematic analysis of O vacancies in α-Al 2 O 3, α …

Ga2O3 and In2O3 are among the most important wide-bandgap semiconductors for
transparent electronics and ultraviolet optoelectronics. Their pronounced polymorphism …

We determine the composition dependence of the transverse and longitudinal optical
infrared-active phonon modes in rhombohedral α-(Al x Ga 1− x) 2 O 3 alloys by far-infrared …

In this article, the electronic band structure of a β−(A lx G a 1− x) 2 O 3 alloy system is
calculated, with β− Ga 2 O 3 as the bulk crystal. The technique of band unfolding is …

The anisotropic dielectric functions (DF) of corundum structured m-plane α-(Al x Ga 1− x) 2 O
3 thin films (up to x= 0.76) grown on m-plane sapphire substrate by metalorganic CVD have …

A quasibinary system of Ga 2 O 3-Al 2 O 3 offers a range of applications in wide bandgap
semiconductor engineering. Different polymorphs and concentrations of (Al x Ga 1− x) 2 O 3 …

Redshift of the absorption onset and amplitude increase in the ultraviolet complex dielectric
function (DF) of corundum-like α-(Ti x Ga 1− x) 2 O 3 with increasing Ti content is presented …