Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Critical role of post-annealing in Ta/Co60Fe20B20/Ta thin film heterostructures: Structural, static, and dynamic properties
Abstract The Co 60 Fe 20 B 20 (CoFeB) alloy has been recognized as a potential material
system in spintronic devices. The post-annealing treatment of the CoFeB based …
system in spintronic devices. The post-annealing treatment of the CoFeB based …
Energy efficient all-electric-field-controlled multiferroic magnetic domain-wall logic
Magnetic domain wall (DW)-based logic devices offer numerous opportunities for emerging
electronics applications allowing superior performance characteristics such as fast motion …
electronics applications allowing superior performance characteristics such as fast motion …
Inducing or suppressing the anisotropy in multilayers based on CoFeB
Controlling the uniaxial magnetic anisotropy is of practical interest for a wide variety of
applications. We study Co 40 Fe 40 B 20 single films grown on various crystalline …
applications. We study Co 40 Fe 40 B 20 single films grown on various crystalline …
Observation of magnetic droplets in magnetic tunnel junctions
Magnetic droplets, a class of highly nonlinear magnetodynamic solitons, can be nucleated
and stabilized in nanocontact spin-torque nano-oscillators. Here we experimentally …
and stabilized in nanocontact spin-torque nano-oscillators. Here we experimentally …
[ספר][B] Climate justice beyond the state
Virtually every figure in the climate justice literature agrees that states are presently failing to
discharge their duties to take action on climate change. Few, however, have attempted to …
discharge their duties to take action on climate change. Few, however, have attempted to …
Thermally robust perpendicular SOT-MTJ memory cells with STT-assisted field-free switching
YJ Tsou, WJ Chen, HC Shih, PC Liu… - … on Electron Devices, 2021 - ieeexplore.ieee.org
A back-end-of-line compatible 400° C thermally robust perpendicular spin-orbit torque
magnetic tunnel junction (p-SOT-MTJ) memory cell with a tunnel magnetoresistance ratio of …
magnetic tunnel junction (p-SOT-MTJ) memory cell with a tunnel magnetoresistance ratio of …
Deterministic and stochastic aspects of current-induced magnetization reversal in perpendicular nanomagnets
We study the incubation and transition times that characterize the magnetization switching
induced by spin-orbit torques in nanomagnets with perpendicular anisotropy. We present a …
induced by spin-orbit torques in nanomagnets with perpendicular anisotropy. We present a …
Instant-on spin torque in noncollinear magnetic tunnel junctions
Through recent advances, the relevance of magnetic tunnel junctions (MTJs) to the
microelectronics industry continues to rise. However, their reversal speed still suffers from …
microelectronics industry continues to rise. However, their reversal speed still suffers from …
Reduced exchange interactions in magnetic tunnel junction free layers with insertion layers
Perpendicularly magnetized CoFeB layers with ultrathin nonmagnetic insertion layers are
very widely used as the electrodes in magnetic tunnel junctions for spin-transfer magnetic …
very widely used as the electrodes in magnetic tunnel junctions for spin-transfer magnetic …
A multifunctional standardized magnetic tunnel junction stack embedding sensor, memory and oscillator functionality
The objective of this study is to co-integrate multiple digital and analog functions together
within CMOS by develo** a universal magnetic tunneling junction stack (MTJ) capable of …
within CMOS by develo** a universal magnetic tunneling junction stack (MTJ) capable of …