Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

Z Ye, C Tan, X Huang, Y Ouyang, L Yang, Z Wang… - Nano-micro letters, 2023 - Springer
As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has
excellent physical properties, such as high carrier mobility, stability, and abundance on …

Vapour-phase deposition of two-dimensional layered chalcogenides

T Zhang, J Wang, P Wu, AY Lu, J Kong - Nature Reviews Materials, 2023 - nature.com
Abstract Two-dimensional (2D) layered materials are attracting a lot of attention because of
unique physicochemical properties that are intriguing for both fundamental research and …

Chemical vapor deposition growth of two-dimensional compound materials: controllability, material quality, and growth mechanism

L Tang, J Tan, H Nong, B Liu… - Accounts of Materials …, 2020 - ACS Publications
Conspectus Two-dimensional (2D) compound materials are regarded as promising
candidates in many applications, including electronics, optoelectronics, sensors, and flexible …

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

G Xue, B Qin, C Ma, P Yin, C Liu, K Liu - Chemical Reviews, 2024 - ACS Publications
Over the past decade, research on atomically thin two-dimensional (2D) transition metal
dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high …

Van der Waals‐Interface‐Dominated All‐2D Electronics

X Zhang, Y Zhang, H Yu, H Zhao, Z Cao… - Advanced …, 2023 - Wiley Online Library
The interface is the device. As the feature size rapidly shrinks, silicon‐based electronic
devices are facing multiple challenges of material performance decrease and interface …

Modularized batch production of 12-inch transition metal dichalcogenides by local element supply

G Xue, X Sui, P Yin, Z Zhou, X Li, Y Cheng, Q Guo… - Science Bulletin, 2023 - Elsevier
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) are regarded as
pivotal semiconductor candidates for next-generation devices due to their atomic-scale …

Do** concentration modulation in vanadium-doped monolayer molybdenum disulfide for synaptic transistors

J Zou, Z Cai, Y Lai, J Tan, R Zhang, S Feng, G Wang… - ACS …, 2021 - ACS Publications
Do** is an effective way to modify the electronic property of two-dimensional (2D)
materials and endow them with additional functionalities. However, wide-range control of the …

Substrate Engineering for Chemical Vapor Deposition Growth of Large‐Scale 2D Transition Metal Dichalcogenides

S Li, D Ouyang, N Zhang, Y Zhang, A Murthy… - Advanced …, 2023 - Wiley Online Library
The large‐scale production of 2D transition metal dichalcogenides (TMDs) is essential to
realize their industrial applications. Chemical vapor deposition (CVD) has been considered …

A review on recent advances of chemical vapor deposition technique for monolayer transition metal dichalcogenides (MX2: Mo, W; S, Se, Te)

FG Aras, A Yilmaz, HG Tasdelen, A Ozden, F Ay… - Materials Science in …, 2022 - Elsevier
Transition metal dichalcogenide (TMD) monolayers have recently garnered significant
attention owing to their favorable electronic and optoelectronic properties. To date, chemical …

Carrier Trap** in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory

R Zhang, Y Lai, W Chen, C Teng, Y Sun, L Yang… - ACS …, 2022 - ACS Publications
Atomically thin two-dimensional (2D) semiconductors are promising for next-generation
memory to meet the scaling down of semiconductor industry. However, the controllability of …