Hexagonal boron nitride for next‐generation photonics and electronics
S Moon, J Kim, J Park, S Im, J Kim, I Hwang… - Advanced …, 2023 - Wiley Online Library
Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted
tremendous interest motivated by the extraordinary properties it shows across the fields of …
tremendous interest motivated by the extraordinary properties it shows across the fields of …
Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices
Summary Two-dimensional (2D) materials such as graphene, transition metal
dichalcogenides (TMDs), and their heterojunctions are prospective materials for future …
dichalcogenides (TMDs), and their heterojunctions are prospective materials for future …
Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures
Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of~
5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high …
5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high …
Recent Advances on Pulsed Laser Deposition of Large‐Scale Thin Films
Abstract 2D thin films, possessing atomically thin thickness, are emerging as promising
candidates for next‐generation electronic devices, due to their novel properties and high …
candidates for next‐generation electronic devices, due to their novel properties and high …
van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides
L Ma, Y Wang, Y Liu - Chemical Reviews, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly
promising candidates for next-generation electronics owing to their atomically thin structures …
promising candidates for next-generation electronics owing to their atomically thin structures …
Two-dimensional vertical-lateral hybrid heterostructure for ultrasensitive photodetection and image sensing
N Zhang, F Wang, P Li, Y Liang, H Luo, D Ouyang… - Materials Today, 2023 - Elsevier
Constructing heterostructures of two-dimensional (2D) materials is critical for boosting their
photoelectric performances, enabling a promising route to meet the harsh requirement of …
photoelectric performances, enabling a promising route to meet the harsh requirement of …
Spin‐Selective Memtransistors with Magnetized Graphene
Spin‐polarized bands in pristine and proximity‐induced magnetic materials are promising
building blocks for future devices. Conceptually new memory, logic, and neuromorphic …
building blocks for future devices. Conceptually new memory, logic, and neuromorphic …
Narrowband Electroluminescence from Color Centers in Hexagonal Boron Nitride
Defects in wide bandgap materials have emerged as promising candidates for solid-state
quantum optical technologies. Electrical excitation of single emitters may lead to scalable on …
quantum optical technologies. Electrical excitation of single emitters may lead to scalable on …
[HTML][HTML] Direct growth of hexagonal boron nitride films on dielectric sapphire substrates by pulsed laser deposition for optoelectronic applications
G Wang, J Chen, J Meng, Z Yin, J Jiang, Y Tian… - Fundamental …, 2021 - Elsevier
Recently, hexagonal boron nitride (h-BN), an ultra-wide bandgap semiconductor, has
attracted considerable attention owing to its excellent properties. In thin films grown on metal …
attracted considerable attention owing to its excellent properties. In thin films grown on metal …
Graphene strain-effect transistor with colossal on/off current ratio enabled by reversible nanocrack formation in metal electrodes on piezoelectric substrates
Extraordinarily high carrier mobility in graphene has led to many remarkable discoveries in
physics and at the same time invoked great interest in graphene-based electronic devices …
physics and at the same time invoked great interest in graphene-based electronic devices …