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FinFET to GAA MBCFET: a review and insights
This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
[HTML][HTML] Performance Enhancement of MoSe2 and WSe2 Based Junction Field Effect Transistors with Gate-All-Around Structure
C Woo, A Abderrahmane, P Jung, P Ko - Crystals, 2024 - mdpi.com
Recently, two-dimensional materials have gained significant attention due to their
outstanding properties such as high charge mobility, mechanical strength, and electrical …
outstanding properties such as high charge mobility, mechanical strength, and electrical …
[HTML][HTML] Electronic Properties of Atomic Layer Deposited HfO2 Thin Films on InGaAs Compared to HfO2/GaAs Semiconductors
This paper demonstrates how the treatment of III-V semiconductor surface affects the
number of defects and ensures the conformal growth of the high-k dielectric thin film. We …
number of defects and ensures the conformal growth of the high-k dielectric thin film. We …
[PDF][PDF] The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate by molecular beam epitaxy
J ZHANG, Z YANG, LM ZHENG, XJ ZHU… - 红外与毫米波 …, 2025 - journal.sitp.ac.cn
This paper discusses the influence of Sb/In ratio on the transport properties and crystal
quality of the 200 nm InAsxSb1-x thin film. The Sb content of InAsxSb1-x thin film in all …
quality of the 200 nm InAsxSb1-x thin film. The Sb content of InAsxSb1-x thin film in all …
The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate by molecular beam epitaxy
张静， 阳智， 郑黎明， 朱小娟， 王萍… - Journal of Infrared and …, 2024 - journal.sitp.ac.cn
This paper discusses the influence of Sb/In ratio on the transport properties and crystal
quality of the 200 nm InAsxSb1-x thin film. The Sb content of InAsxSb1-x thin film in all …
quality of the 200 nm InAsxSb1-x thin film. The Sb content of InAsxSb1-x thin film in all …
[PDF][PDF] V/III比对分子束外延生长的GaAs基InAsxSb1-x电子迁移率的影响
张静， 阳智， 郑黎明， 朱小娟， 王萍， 杨琳 - 红外与毫米波学报, 2024 - journal.sitp.ac.cn
The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate
by molecular beam epitaxy Page 1 第44 卷第1 期 2025 年2 月 红外与毫米波学报 J. Infrared …
by molecular beam epitaxy Page 1 第44 卷第1 期 2025 年2 月 红外与毫米波学报 J. Infrared …