The historical and technological development of the ubiquitous trench power MOSFET (or
vertical trench VDMOS) is described. Overcoming the deficiencies of VMOS and planar …

A power semiconductor device includes a plurality of trenches formed within a
semiconductor body, each trench including one or more electrodes formed therein. In …

Superjunction has arguably been the most creative and important concept in power device
field. Superjunction vertical diffused MOSFET (SJ VDMOS) has been commercialized and …

Record performance of a novel power transistor integrated in a 0.35 μm power IC
technology is reported. Measured specific on-state resistance of 33 mOhm* mm 2 for a 94 V …

The leakage current degradation, single-event burnout (SEB), and single-event gate rupture
(SEGR) behaviors induced by the heavy-ion irradiation in p-Channel and n-Channel power …

In this paper, a new power metal-oxide-semiconductor field-effect transistor (MOSFET) with
a FS surface to reduce the specific on-resistance R on, sp is proposed. Semi-insulating …

BACKGROUND Deep trench isolation is commonly used in many bipolar and BiCMOS
process technologies. It offers significant die size reduction over junction-isolated processes …

The performance merit of silicon unipolar power devices is best described by a trade-off
relationship between specific on-state resistance (R on, sp) and breakdown voltage (V br) …

A high-voltage transistor with a low specific on-state resistance and that supports high
voltage in the off-state includes one or more source regions disposed adjacent to a multi …

Gate enhanced power UMOSFET (GE-UMOS) is proposed to decrease the specific on-
resistance of the device. The key feature of this structure is that the deep trench polysilicon …