High-k Organic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors
RP Ortiz, A Facchetti, TJ Marks - Chemical reviews, 2010 - ACS Publications
The search for high dielectric constant (high-k) gate dielectric materials for field-effect
transistor-enabled (FET) applications has stimulated important research activities in both …
transistor-enabled (FET) applications has stimulated important research activities in both …
[LLIBRE][B] Carbon nanotubes: science and applications
M Meyyappan - 2004 - taylorfrancis.com
Carbon nanotubes, with their extraordinary mechanical and unique electronic properties,
have garnered much attention in the past five years. With a broad range of potential …
have garnered much attention in the past five years. With a broad range of potential …
Performance analysis of carbon nanotube transistors-A review
Carbon Nanotube Field Effect Transistors (CNTFET) are excellent in the nano-material
regime for providing higher performance in terms of power consumption even though the …
regime for providing higher performance in terms of power consumption even though the …
Improvement of electromechanical actuating performances of a silicone dielectric elastomer by dispersion of titanium dioxide powder
This paper presents the first reported data on the embedding of highly dielectric ceramic
inclusions in a rubbery host medium as a means to increase the electromechanical material …
inclusions in a rubbery host medium as a means to increase the electromechanical material …
Poly (3-hexylthiophene) field-effect transistors with high dielectric constant gate insulator
G Wang, D Moses, AJ Heeger, HM Zhang… - Journal of applied …, 2004 - pubs.aip.org
High dielectric constant (k= 41) titanium oxide (TiO 2) was used as the gate insulator in field-
effect transistors (FETs) with regioregular poly (3-hexylthiophene)(RR-P3HT) as the …
effect transistors (FETs) with regioregular poly (3-hexylthiophene)(RR-P3HT) as the …
Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors
MH Yang, KBK Teo, L Gangloff, WI Milne… - Applied Physics …, 2006 - pubs.aip.org
The subthreshold slope, transconductance, threshold voltage, and hysteresis of a carbon
nanotube field-effect transistor (CNT FET) were examined as its configuration was changed …
nanotube field-effect transistor (CNT FET) were examined as its configuration was changed …
Temperature dependent separation of metallic and semiconducting carbon nanotubes using gel agarose chromatography
Post-synthesis separation of metallic (m-SWNTs) and semiconducting (s-SWNTs) single-
wall carbon nanotubes (SWNTs) remains a challenging process. Gel agarose …
wall carbon nanotubes (SWNTs) remains a challenging process. Gel agarose …
Memory effects of carbon nanotubes as charge storage nodes for floating gate memory applications
XB Lu, JY Dai - Applied physics letters, 2006 - pubs.aip.org
A nonvolatile flash memory device has been fabricated using carbon nanotubes (CNTs) as a
floating gate embedded in HfAlO (the atomic ratio of Hf∕ Al is 1: 2) high-k tunneling/control …
floating gate embedded in HfAlO (the atomic ratio of Hf∕ Al is 1: 2) high-k tunneling/control …
Carbon nanotube field-effect transistor operation at microwave frequencies
AA Pesetski, JE Baumgardner, E Folk… - Applied Physics …, 2006 - pubs.aip.org
A top-gated carbon nanotube (CNT) field-effect transistor (FET) was fabricated on a quartz
substrate. We used a novel measurement approach and demonstrated for the first time …
substrate. We used a novel measurement approach and demonstrated for the first time …
Ambient electronics
Ambient ElectronicsThis is a translated version of the original paper which appeared in Oyo
Buturi 80 (2011) 461 [in Japanese]. Page 1 Japanese Journal of Applied Physics Ambient …
Buturi 80 (2011) 461 [in Japanese]. Page 1 Japanese Journal of Applied Physics Ambient …