(57) ABSTRACT A FinPET includes a semiconductor fin including an inner region, and a
germanium-doped layer on a top surface and sidewall Surfaces of the inner region. The …

Embodiments are directed to a method and resulting struc tures for a dual channel
complementary metal-oxide-semi conductor (CMOS) having common gate stacks. A first …

FinFETs and methods for making FinFETs are disclosed. A fin is formed on a substrate,
wherein the fin has a height greater than 2 to 6 times of its width, a length defining a channel …

The disclosure relates to a fin structure of a semiconductor device. An exemplary fin
structure for a semiconductor device comprises a lower portion protruding from a major …

BACKGROUND As the semiconductor industry has progressed into nano meter technology
process nodes in pursuit of higher device density, higher performance, and lower costs …

A semiconductor device is provided. A substrate includes a fin. The fin extends in a first
direction. A gate structure is disposed on a first region of the fin. The gate structure extends …

(57) ABSTRACT A method for fabricating a fin type transistor uniformly implants in targeted
regions. The method includes forming a fin protruding in a Z-axis direction from a Substrate …

(57) ABSTRACT A semiconductor device includes first source/drain regions disposed at
both sides of a first gate structure and including dopants of a first conductivity type, counter …

US9087858B2 - Manufacturing method of a semiconductor device - Google Patents
US9087858B2 - Manufacturing method of a semiconductor device - Google Patents Manufacturing …

(57) ABSTRACT A FinFET includes a semiconductor fin including an inner region, and a
germanium-doped layer on a top surface and sidewall surfaces of the inner region. The …