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High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-xy/As/InP strained-layer quantum-well lasers for subscriber loop applications
CE Zah, R Bhat, BN Pathak, F Favire… - IEEE Journal of …, 1994 - ieeexplore.ieee.org
Design considerations for fabricating highly efficient uncooled semiconductor lasers are
discussed. The parameters investigated include the temperature characteristics of threshold …
discussed. The parameters investigated include the temperature characteristics of threshold …
Compound semiconductor growth by metallorganic molecular beam epitaxy (MOMBE)
CR Abernathy - Materials Science and Engineering: R: Reports, 1995 - Elsevier
The replacement of elemental sources with gaseous precursors allows many of the
advantages of metallorganic chemical vapour deposition (MOCVD) to be combined with …
advantages of metallorganic chemical vapour deposition (MOCVD) to be combined with …
Random alloy thick AlGaAsSb avalanche photodiodes on InP substrates
We demonstrate low noise random alloy (RA) Al 0.85 Ga 0.15 AsSb (hereafter AlGaAsSb)
avalanche photodiodes (APDs) nearly lattice-matched to InP substrates. In contrast to digital …
avalanche photodiodes (APDs) nearly lattice-matched to InP substrates. In contrast to digital …
Photoluminescence and photoluminescence excitation spectroscopy of Al0.48In0.52As
SM Olsthoorn, F Driessen, A Eijkelenboom… - Journal of applied …, 1993 - pubs.aip.org
A detailed study of the photoluminescence (PL) and photoluminescence excitation (PLE)
properties of Al0. 48In0. 52As is presented. A PL linewidth of 13 meV and a Stokes shift of …
properties of Al0. 48In0. 52As is presented. A PL linewidth of 13 meV and a Stokes shift of …
Long wavelength high-speed semiconductor lasers with carrier transport effects
M Ishikawa, R Nagarajan, T Fukushima… - IEEE journal of …, 1992 - ieeexplore.ieee.org
Carrier transport has a significant effect on the high-speed characteristics of semiconductor
lasers. The authors show theoretically and experimentally that the low frequency rolloff and …
lasers. The authors show theoretically and experimentally that the low frequency rolloff and …
V/III ratio effects on high quality InAlAs for quantum cascade laser structures
In this study we report the V/III ratio effects on growth, structural, optical and do**
characteristics of low growth rate (∼ 1 Å/s) heteroepitaxial Metal Organic Chemical Vapor …
characteristics of low growth rate (∼ 1 Å/s) heteroepitaxial Metal Organic Chemical Vapor …
Photoluminescence study of the interface in type II InAlAs–InP heterostructures
Spatially indirect radiative recombinations (type II) have been studied in InAlAs–InP
heterostructures grown by gas source molecular beam epitaxy with emphasis on the direct …
heterostructures grown by gas source molecular beam epitaxy with emphasis on the direct …
Band offsets and transitivity of As/As/InP heterostructures
J Böhrer, A Krost, T Wolf, D Bimberg - Physical Review B, 1993 - APS
Abstract In 1− x Ga x As/In 1− y Al y As quantum wells (QW's) and In 1− y Al y As layers
slightly lattice mismatched to InP substrates are grown by metalorganic chemical-vapor …
slightly lattice mismatched to InP substrates are grown by metalorganic chemical-vapor …
Photoluminescence and band offsets of AlInAs/InP
We report the temperature dependence of Al 0.46 In 0.54 As photoluminescence (PL)
transition energies and Al 0.46 In 0.54 As/InP interface staggered line-up luminescence …
transition energies and Al 0.46 In 0.54 As/InP interface staggered line-up luminescence …
Optical transitions and chemistry at the In0.52Al0.48As/InP interface
M Brasil, RE Nahory, WE Quinn, MC Tamargo… - Applied physics …, 1992 - pubs.aip.org
We report properties of the InAlAs/InP interface and its formation during growth by
organometallic molecular beam epitaxy. Taking advantage of the photoluminescence …
organometallic molecular beam epitaxy. Taking advantage of the photoluminescence …