N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …
Molecular beam epitaxy of GaN nanowires on epitaxial graphene
S Fernández-Garrido, M Ramsteiner, G Gao… - Nano …, 2017 - ACS Publications
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline
GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we …
GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we …
N-polar III-nitride transistors
This chapter reviews the historical development and present status of N-polar 000 1¯ GaN
high electron mobility transistors (HEMTs) that aim at addressing the device scaling …
high electron mobility transistors (HEMTs) that aim at addressing the device scaling …
III-Nitride p-down green (520 nm) light emitting diodes with near-ideal voltage drop
SI Rahman, Z Jamal-Eddine… - Applied Physics …, 2022 - pubs.aip.org
We demonstrate p-down green emitting LEDs with low turn-on voltage enabled by efficient
tunnel junctions. Due to the polarization field alignment in the (In, Ga) N/GaN interface with …
tunnel junctions. Due to the polarization field alignment in the (In, Ga) N/GaN interface with …
[HTML][HTML] Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions
The frozen internal polarization-induced electric fields due to broken inversion symmetry in
all conventional blue and green nitride semiconductor light-emitting semiconductor quantum …
all conventional blue and green nitride semiconductor light-emitting semiconductor quantum …
[HTML][HTML] Excitonic and deep-level emission from N-and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N-
and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN {0001}. Compared …
and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN {0001}. Compared …
Optical properties of N-polar GaN: The possible role of nitrogen vacancy-related defects
Detailed comparison of optical quality of GaN layers grown homoepitaxially on bulk Ga-
polar and N-polar substrates by plasma-assisted molecular beam epitaxy was performed …
polar and N-polar substrates by plasma-assisted molecular beam epitaxy was performed …
[HTML][HTML] Comparative analysis of selective area grown Ga-and N-polar InGaN/GaN nanowires for quantum emitters
In this paper, we report the molecular beam epitaxy-grown InGaN-quantum disks embedded
within selective area epitaxy of GaN nanowires with both Ga-and N-polarities. A detailed …
within selective area epitaxy of GaN nanowires with both Ga-and N-polarities. A detailed …
Luminescent N-polar (In, Ga) N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 C
Previously, we found that N-polar (In, Ga) N/GaN quantum wells prepared on freestanding
GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth …
GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth …
Ga-Polar Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and …
We investigate the radiative and nonradiative recombination processes in planar (In, Ga)
N/GaN (0001) quantum wells and (In, Ga) N quantum disks embedded in GaN (000 1¯) …
N/GaN (0001) quantum wells and (In, Ga) N quantum disks embedded in GaN (000 1¯) …