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Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching
W Geng, G Yang, X Zhang, X Zhang… - Journal of …, 2022 - iopscience.iop.org
In this work, we propose to reveal the subsurface damage (SSD) of 4H-SiC wafers by photo-
chemical etching and identify the nature of SSD by molten-alkali etching. Under UV …
chemical etching and identify the nature of SSD by molten-alkali etching. Under UV …
Dominant factors and their action mechanisms on material removal rate in electrochemical mechanical polishing of 4H-SiC (0001) surface
Slurryless electrochemical mechanical polishing (ECMP) has been confirmed as a highly
efficient damage-free polishing technique for SiC wafers. To increase the material removal …
efficient damage-free polishing technique for SiC wafers. To increase the material removal …
Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules
The generation and expansion of stacking faults (SFs) during the physical-vapor-transport
(PVT) growth of n-type 4H-SiC single-crystal boules are investigated by combining …
(PVT) growth of n-type 4H-SiC single-crystal boules are investigated by combining …
Fabrication of high aspect ratio, non-line-of-sight vias in silicon carbide by a two-photon absorption method
JE Payne, P Nyholm, R Beazer, J Eddy… - Scientific Reports, 2024 - nature.com
The future of Moore's Law for high-performance integrated circuits (ICs) is going to be driven
more by advanced packaging and three-dimensional (3D) integration than by simply …
more by advanced packaging and three-dimensional (3D) integration than by simply …
SiC: a photocathode for water splitting and hydrogen storage
Sic : a photocathode for water splitting and hydrogen storage IRIS SUrplus Home Sfoglia
Macrotipologie & tipologie Autore Titolo Riviste Serie Settore Scientifico Disciplinare Tipologia …
Macrotipologie & tipologie Autore Titolo Riviste Serie Settore Scientifico Disciplinare Tipologia …
Nucleation of threading dislocations in 4H-SiC at early physical-vapor-transport growth stage
Q Shao, W Geng, S Xu, P Chen, X Zhang… - Crystal Growth & …, 2023 - ACS Publications
In this work, we identify the nucleation mechanism of threading dislocations (TDs)
associated with stacking faults (SFs) and 15R-SiC at the early growth stage of 4H-SiC single …
associated with stacking faults (SFs) and 15R-SiC at the early growth stage of 4H-SiC single …
High quality SiC microdisk resonators fabricated from monolithic epilayer wafers
The exquisite mechanical properties of SiC have made it an important industrial material
with applications in microelectromechanical devices and high power electronics. Recently …
with applications in microelectromechanical devices and high power electronics. Recently …
Dopant Selective Photoelectrochemical Etching of SiC
S Whiteley, A Sorensen, JJ Vajo, R Sfadia… - Journal of The …, 2023 - iopscience.iop.org
Single crystalline 4H-SiC is a wide-gap semiconductor with optical properties that are
poised to enable new applications in MEMS and quantum devices. A number of key hurdles …
poised to enable new applications in MEMS and quantum devices. A number of key hurdles …
Selective Undercut of Undoped Optical Membranes for Spin-Active Color Centers in 4H-Silicon Carbide
J Dietz, A ** monolithic 3D structures from 4H-SiC wafers
A Hochreiter, F Groß, MN Möller, M Krieger… - Scientific Reports, 2023 - nature.com
Abstract Silicon Carbide (SiC) is an outstanding material, not only for electronic applications,
but also for projected functionalities in the realm of spin-based quantum technologies, nano …
but also for projected functionalities in the realm of spin-based quantum technologies, nano …