Point defects and impurities strongly affect the physical properties of materials and have a
decisive impact on their performance in applications. First-principles calculations have …

Positron annihilation spectroscopy is particularly suitable for studying vacancy-type
defects<? format?> in semiconductors. Combining state-of-the-art experimental and …

In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the
research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate …

Quaternary semiconducting materials based on the kesterite (A2BCX4) mineral structure are
the most promising candidates to overtake the current generation of light‐absorbing …

Recent developments in theoretical techniques have significantly improved the predictive
power of density-functional-based calculations. In this review, we discuss how such …

First-principles calculations have evolved from mere aids in explaining and supporting
experiments to powerful tools for predicting new materials and their properties. In the first …

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

REVIEW High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet
light have been obtained through the use of an InGaN active layer instead of a GaN active …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

We have investigated native defects and native defect‐impurity complexes as candidate
sources for the yellow luminescence in GaN. Using state‐of‐the‐art first‐principles …