Laser induced defects in laser doped solar cells
Laser do** offers a promising method to define selective emitters for solar cells. Its main
advantage is the localised nature of the laser beam, which allows melting of the surface area …
advantage is the localised nature of the laser beam, which allows melting of the surface area …
Influence of laser power on the properties of laser doped solar cells
Z Hameiri, L Mai, T Puzzer, SR Wenham - Solar Energy Materials and Solar …, 2011 - Elsevier
In recent years, increased attention has been focused on the use of lasers in different
fabrication steps of solar cells, in particular laser do** to form emitter and/or selective …
fabrication steps of solar cells, in particular laser do** to form emitter and/or selective …
Minority carrier transport in lead sulfide quantum dot photovoltaics
Lead sulfide quantum dots (PbS QDs) are an attractive material system for the development
of low-cost photovoltaics (PV) due to their ease of processing and stability in air, with …
of low-cost photovoltaics (PV) due to their ease of processing and stability in air, with …
Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications
Axial p–n and p–i–n junctions in GaAs 0.7 P 0.3 nanowires are demonstrated and analyzed
using electron beam induced current microscopy. Organized self-catalyzed nanowire arrays …
using electron beam induced current microscopy. Organized self-catalyzed nanowire arrays …
Electron beam induced current microscopy of silicon p–n junctions in a scanning transmission electron microscope
AP Conlan, G Moldovan, L Bruas, E Monroy… - Journal of Applied …, 2021 - pubs.aip.org
A silicon pn junction has been mapped using electron beam induced current in both a
scanning transmission electron microscope (STEM) and a conventional scanning electron …
scanning transmission electron microscope (STEM) and a conventional scanning electron …
[HTML][HTML] Impact of electron injection on carrier transport and recombination in unintentionally doped GaN
The impact of electron injection on minority carrier (hole) diffusion length and lifetime at
variable temperatures was studied using electron beam-induced current, continuous, and …
variable temperatures was studied using electron beam-induced current, continuous, and …
[HTML][HTML] Analytical and numerical simulation of electron beam induced current profiles in pn junctions
The electron beam induced current (EBIC) mode of a scanning electron microscope (SEM)
is a widely used technique for the quantitative assessment of minority carrier diffusion length …
is a widely used technique for the quantitative assessment of minority carrier diffusion length …
Laser-doped selective emitter and local back surface field solar cells with rear passivation
Z Hameiri - 2010 - unsworks.unsw.edu.au
In order to make solar energy a viable solution for the energy challenges facing humankind
in the coming years, the cost of solar cells must be reduced. The single sided laser-doped …
in the coming years, the cost of solar cells must be reduced. The single sided laser-doped …
Leakage current simulation of insulating thin film irradiated by a nonpenetrating electron beam
HB Zhang, WQ Li, M Cao - Chinese Physics Letters, 2012 - iopscience.iop.org
We perform numerical simulations of the leakage current characteristics of an insulating thin
film of SiO 2 negatively charged by a low-energy nonpenetrating focused electron beam. For …
film of SiO 2 negatively charged by a low-energy nonpenetrating focused electron beam. For …
Determination of diffusion length for the finite thickness normal-collector configuration using EBIC technique
This paper presents a study of the extraction of the diffusion length in the normal-collector
configuration with finite thickness with the use of the electron beam-induced current (EBIC) …
configuration with finite thickness with the use of the electron beam-induced current (EBIC) …