The fabrication of thin, sub-40 nm doped layers in Si with high concentrations of electrically
active dopants and box-like profiles is a major technological challenge. Making these …

Ion implants of 1 keV B+ 11 and 5 keV BF 2+, to a dose of 1× 10 15/cm 2 at a tilt angle of 0°,
were implanted into preamorphized (Si+, 70 keV, 1× 10 15/cm 2) wafers. These samples …

0001. The present invention relates in a general way to a proceSS for the industrial
production of Semiconductors and more particularly to a method for treating Semiconductors …

Implantation damage plays an important role in silicon device manufacturing since, eg, it
causes transient enhanced diffusion and influences the activation of dopants. Many studies …

Annealing of ion-implanted Si leads to the formation of various extrinsic defects which affect
dopant diffusion. In this paper, we describe the mechanisms by which, small clusters evolve …

Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large
supersaturations of self-interstitial silicon atoms left after implantation which also often lead …

The role of fluorine in suppressing boron diffusion was investigated by utilizing a buried
dopant marker to monitor the interaction of fluorine with interstitials. A boron spike with a …

Si wafers were preamorphized by either Si+ or Ge+ ions at temperatures between 5 and 40°
C. The diffusion of low energy (4 keV) B+ implants into the preamorphized Si was studied in …

The evolution of both 311 defects and dislocation loops in the end-of-range EOR damage
region in silicon amorphized by ion implantation was studied by ex situ transmission …

A method for completely suppressing the transient enhanced diffusion (TED) of boron
implanted in preamorphized silicon is demonstrated. Boron is implanted in a molecular …