Ferroelectric negative capacitance
The capacitor is a key element of electronic devices and is characterized by positive
capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases …
capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases …
Ferroelectric negative capacitance field effect transistor
With the progress in silicon circuit miniaturization, lowering power consumption becomes the
major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by …
major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by …
Numerical investigation of short-channel effects in negative capacitance MFIS and MFMIS transistors: Subthreshold behavior
We present a detailed TCAD analysis of the impact of length scaling and the associated
short-channel effects in the subthreshold regime of the two classes of double-gate negative …
short-channel effects in the subthreshold regime of the two classes of double-gate negative …
Physical insights on negative capacitance transistors in nonhysteresis and hysteresis regimes: MFMIS versus MFIS structures
We present a comprehensive comparison of the two different types of ferroelectric negative
capacitance FET (NCFET) structures: metal-ferroelectric-metal-insulator-semiconductor …
capacitance FET (NCFET) structures: metal-ferroelectric-metal-insulator-semiconductor …
Negative differential resistance in negative capacitance FETs
We report the investigation of negative differential resistance (NDR) in negative capacitance
(NC) germanium (Ge) pFETs. The NDR in NC transistors is attributed to the coupling of drain …
(NC) germanium (Ge) pFETs. The NDR in NC transistors is attributed to the coupling of drain …
Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating
Conventional field-effect transistors (FETs) are not expected to satisfy the requirements of
future large integrated nanoelectronic circuits because of these circuits' ultra-high power …
future large integrated nanoelectronic circuits because of these circuits' ultra-high power …
Computing with ferroelectric FETs: Devices, models, systems, and applications
In this paper, we consider devices, circuits, and systems comprised of transistors with
integrated ferroelectrics. Said structures are actively being considered by various …
integrated ferroelectrics. Said structures are actively being considered by various …
Performance evaluation of 7-nm node negative capacitance FinFET-based SRAM
We compare the performance of static random access memory (SRAM) cells based on
negative capacitance (NC) FinFETs and reference FinFETs at the 7-nm technology node …
negative capacitance (NC) FinFETs and reference FinFETs at the 7-nm technology node …
Analysis of DIBL effect and negative resistance performance for NCFET based on a compact SPICE model
In this paper, we describe an improved SPICE model for the negative capacitance field-
effect transistor (NCFET). According to the law of conservation of charge, the model is built …
effect transistor (NCFET). According to the law of conservation of charge, the model is built …
Compact modeling of drain current, charges, and capacitances in long-channel gate-all-around negative capacitance MFIS transistor
In this paper, we present a surface potential-based explicit continuous model for a metal-
ferroelectric-insulator-semiconductor (MFIS) type gate-all-around negative capacitance …
ferroelectric-insulator-semiconductor (MFIS) type gate-all-around negative capacitance …