On annealing a boron implanted Si sample at∼ 800° C, boron in the tail of the implanted
profile diffuses very fast, faster than the normal thermal diffusion by a factor 100 or more …

The fabrication of ultra large-scale integrated (ULSI) circuits with ever shrinking feature size
requires a continued reduction of diffusion lengths of dopants in Si. However, boron implants …

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during
annealing which arises from the excess interstitials generated by the implant. In order to …

With the development of ultrafast optics, all-optical control of terahertz wave modulation
based on semiconductors has become an important technology of terahertz wave …

The physics and technology of a relatively new, short‐time, thermal processing technique,
namely rapid isothermal processing (RIP), based on incoherent sources of light for the …

The effect of substitutional C on interstitial‐enhanced B diffusion in Si has been investigated.
Substitutional C was incorporated into B doped Si superlattices using molecular‐beam …

The thermal behavior of Fe as a compensating acceptor impurity in β-Ga 2 O 3 (010) was
studied in view of growing interests in semi-insulating Fe-doped Ga 2 O 3 substrates for the …

The anomalous diffusion of ion implanted boron into silicon is shown to be a transient effect
with a decay time that decreases rapidly with increasing anneal temperature. The decay …

The time evolution of B diffusion and electrical activation after ion implantation and
annealing at 800 and 900° C is studied using secondary‐ion mass spectrometry and …

The diffusion of B implanted in Si has been investigated at different concentrations in a wide
range of experimental conditions (temperature from 800 to 1000° C and time from 10 s to 8 …