[HTML][HTML] State of the art and future perspectives in advanced CMOS technology

HH Radamson, H Zhu, Z Wu, X He, H Lin, J Liu… - Nanomaterials, 2020 - mdpi.com
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …

[HTML][HTML] Advanced grazing-incidence techniques for modern soft-matter materials analysis

A Hexemer, P Müller-Buschbaum - IUCrJ, 2015 - journals.iucr.org
The complex nano-morphology of modern soft-matter materials is successfully probed with
advanced grazing-incidence techniques. Based on grazing-incidence small-and wide-angle …

[HTML][HTML] Miniaturization of CMOS

HH Radamson, X He, Q Zhang, J Liu, H Cui, J **ang… - Micromachines, 2019 - mdpi.com
When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …

Strategies for inorganic incorporation using neat block copolymer thin films for etch mask function and nanotechnological application

C Cummins, T Ghoshal, JD Holmes… - Advanced …, 2016 - Wiley Online Library
Block copolymers (BCPs) and their directed self‐assembly (DSA) has emerged as a
realizable complementary tool to aid optical patterning of device elements for future …

Rapid ordering of block copolymer thin films

PW Majewski, KG Yager - Journal of Physics: Condensed Matter, 2016 - iopscience.iop.org
Block-copolymers self-assemble into diverse morphologies, where nanoscale order can be
finely tuned via block architecture and processing conditions. However, the ultimate usage …

Scanning electron microscope measurement of width and shape of 10 nm patterned lines using a JMONSEL-modeled library

JS Villarrubia, AE Vladár, B Ming, RJ Kline, DF Sunday… - Ultramicroscopy, 2015 - Elsevier
The width and shape of 10 nm to 12 nm wide lithographically patterned SiO 2 lines were
measured in the scanning electron microscope by fitting the measured intensity vs. position …

Determining the shape and periodicity of nanostructures using small-angle x-ray scattering

DF Sunday, S List, JS Chawla, RJ Kline - Applied Crystallography, 2015 - journals.iucr.org
The semiconductor industry is exploring new metrology techniques capable of meeting the
future requirement to characterize three-dimensional structure where the critical dimensions …

[KSIĄŻKA][B] Metrology and Diagnostic Techniques for Nanoelectronics

Z Ma, DG Seiler - 2017 - taylorfrancis.com
Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction

D Wack, O Khodykin, AV Shchegrov… - US Patent …, 2022 - Google Patents
Methods and systems for performing measurements of semi conductor structures based on
high-brightness, polychro matic, reflective small angle x-ray scatterometry (RSAXS) …

Characterizing morphology in organic systems with resonant soft X-ray scattering

JH Carpenter, A Hunt, H Ade - Journal of Electron Spectroscopy and …, 2015 - Elsevier
Resonant soft X-ray scattering (R-SoXS) has proven to be a highly useful technique for
studying the morphology of soft matter thin films due to the large intrinsic contrast between …