Oxide trap states versus gas sensing in SiC-MOS capacitors–The effect of N-and P-based post oxidation processes
A novel hydrogen sensor based on Pd/SiO 2/SiC capacitors with field oxide ramp
termination was fabricated, and a systematic investigation of the most utilized post oxidation …
termination was fabricated, and a systematic investigation of the most utilized post oxidation …
Interfacial properties of oxides grown on 3C-SiC by rapid thermal processing
Interfacial properties of/n-type 3C-SiC structures fabricated by rapid thermal processing
have been investigated for various oxidizing and annealing atmospheres. In this work, we …
have been investigated for various oxidizing and annealing atmospheres. In this work, we …
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CK Yew - 1986 - constructionlaw.tku.edu.tw
1. Sharon Wong Sik Dang, Optimisation of natural ventilation towards achieving good indoor
air quality (2018) M. Arch UTM 2. Muhammad Ade Rezky, Third Place: A modern fish market …
air quality (2018) M. Arch UTM 2. Muhammad Ade Rezky, Third Place: A modern fish market …