Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …

A Sn-doped (100)-Ga 2 O 3 epitaxial layer was grown via metal–organic vapor phase
epitaxy onto a single-crystal, Mg-doped semi-insulating (100)-Ga 2 O 3 substrate. Ga 2 O 3 …

In this work, metalorganic chemical vapor deposition (MOCVD) of (010) β-Ga2O3 with fast
growth rates was investigated using trimethylgallium (TMGa) as the gallium (Ga) precursor …

We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in β-Ga
2 O 3 through temperature dependent van der Pauw and Hall effect measurements of …

Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …

Sn-doped gallium oxide (Ga 2 O 3) wrap-gate fin-array field-effect transistors (finFETs) were
formed by top-down BCl 3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga …

We studied the growth of Si-and Sn-doped homoepitaxial β-Ga 2 O 3 layers on (010)-
oriented substrates by metal organic vapor phase epitaxy (MOVPE). At optimal growth …

The Ge do** of β-Ga 2 O 3 (010) films was investigated using plasma-assisted molecular
beam epitaxy as the growth method. The dependences of the amount of Ge incorporated on …