Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities
Characterizing mixed hot-carrier/bias temperature instability (BTI) degradation in full {VG,
VD} bias space is a challenging task. Therefore, studies usually focus on individual …
VD} bias space is a challenging task. Therefore, studies usually focus on individual …
Ultra-low noise defect probing instrument for defect spectroscopy of MOS transistors
M Waltl - IEEE Transactions on Device and Materials Reliability, 2020 - ieeexplore.ieee.org
It is commonly accepted that the performance and time-to-failure of modern semiconductor
transistors are seriously affected by single defects located in the insulator or at the insulator …
transistors are seriously affected by single defects located in the insulator or at the insulator …
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part I: Experimental
B Ullmann, M Jech, K Puschkarsky… - … on Electron Devices, 2018 - ieeexplore.ieee.org
Bias temperature instability (BTI) and hot-carrier degradation (HCD) are among the most
important reliability issues but are typically studied independently in an idealized setting …
important reliability issues but are typically studied independently in an idealized setting …
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part II: Theory
M Jech, B Ullmann, G Rzepa… - … on Electron Devices, 2018 - ieeexplore.ieee.org
In this paper, we examine the interplay of two serious reliability issues in MOSFET devices,
namely, bias temperature instability (BTI) and hot-carrier degradation (HCD). Most …
namely, bias temperature instability (BTI) and hot-carrier degradation (HCD). Most …
Understanding and modeling opposite impacts of self-heating on hot-carrier degradation in n-and p-channel transistors
We extend our framework for hot-carrier degradation (HCD) modeling by covering the
impact of self-heating (SH) on HCD. This impact is threefold:(i) perturbation of carrier …
impact of self-heating (SH) on HCD. This impact is threefold:(i) perturbation of carrier …
Combined Effect of TID Radiation and Electrical Stress on NMOSFETs
The combined effect of total ionizing dose (TID) and electrical stress is investigated on
NMOSFETs. For devices bearing both radiation and electrical stress, the threshold voltage …
NMOSFETs. For devices bearing both radiation and electrical stress, the threshold voltage …
On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors
We simulate relative changes of the saturation drain current during hot-carrier degradation
(HCD) in dynamically-doped (D 2) and" traditional" planar complementary metal-oxide …
(HCD) in dynamically-doped (D 2) and" traditional" planar complementary metal-oxide …
Hydrogen related defects in amorphous SiO2 and the negative bias temperature instability
Y Wimmer - 2017 - repositum.tuwien.at
The bias temperature instability (BTI) is a serious reliability concern in metal-oxide-
semiconductor field-effect transistors (MOSFETs). It is observed when a large voltage is …
semiconductor field-effect transistors (MOSFETs). It is observed when a large voltage is …
[PDF][PDF] Mixed negative bias temperature instability and hot-carrier stress
B Ullmann - 2018 - scholar.archive.org
Bias temperature instability (BTI) and hot-carrier degradation (HCD) are among the most
important reliability issues, which affect the performance of metal-oxide-semiconductor field …
important reliability issues, which affect the performance of metal-oxide-semiconductor field …
Response of switching hole traps in the small-area P-MOSFET under channel hot-hole effect
X Ju, DS Ang - 2019 IEEE International Reliability Physics …, 2019 - ieeexplore.ieee.org
This work elucidates two distinct behaviors of switching hole traps in small-area, SiON gated
p-MOSFETs subjected to channel hot-hole (CHH) effect. First, in all devices tested, the …
p-MOSFETs subjected to channel hot-hole (CHH) effect. First, in all devices tested, the …