[HTML][HTML] Porous silicon for electrical isolation in radio frequency devices: A review

G Gautier, P Leduc - Applied Physics Reviews, 2014 - pubs.aip.org
The increasing expansion of telecommunication applications leads to the integration of
complete system-on-chip associating analog and digital processing units. Besides, the …

Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz

P Sarafis, AG Nassiopoulou - Nanoscale research letters, 2014 - Springer
In this work, the dielectric properties of porous Si for its use as a local substrate material for
the integration on the Si wafer of millimeter-wave devices were investigated in the frequency …

Post-process porous silicon for 5G applications

G Scheen, R Tuyaerts, M Rack, L Nyssens… - Solid-State …, 2020 - Elsevier
The interest of 5G in centimeter and millimeter waves relies on large blocks of available
spectra and thus increased bandwidth. At these frequencies, the dielectric and conductive …

Small-and large-signal performance up to 175° C of low-cost porous silicon substrate for RF applications

M Rack, Y Belaroussi, KB Ali, G Scheen… - … on Electron Devices, 2018 - ieeexplore.ieee.org
This paper focuses on the comparison of the RF performances of various advanced trap-rich
(TR) siliconon-insulator (SOI) and porous silicon (PSi) substrates. The PSi substrates are …

Advanced Si-based substrates for RF passive integration: Comparison between local porous Si layer technology and trap-rich high resistivity Si

P Sarafis, E Hourdakis, AG Nassiopoulou, CR Neve… - Solid-state …, 2013 - Elsevier
In this work, two novel RF substrate technologies are compared, namely local porous Si RF
substrate technology and high resistivity Si with a trap-rich layer on top (trap-rich HR-Si) …

Single photoresist masking for local porous Si formation

E Hourdakis, AG Nassiopoulou - Journal of Micromechanics and …, 2014 - iopscience.iop.org
A simple process for local electrochemical porous Si formation on a Si wafer using a
photoresist mask was developed. In this respect, the AZ9260 photoresist from …

Porous silicon/silicon hybrid substrate applied to the monolithic integration of common-mode and bandpass RF filters

M Capelle, J Billoue, P Poveda… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
In order to develop high performances and miniaturized devices for RF communications,
monolithic integration becomes an important challenge for microelectronics industries …

High quality silicon-based substrates for microwave and millimeter wave passive circuits

Y Belaroussi, M Rack, AA Saadi, G Scheen… - Solid-State …, 2017 - Elsevier
Porous silicon substrate is very promising for next generation wireless communication
requiring the avoidance of high-frequency losses originating from the bulk silicon. In this …

Monolithic integration of low-pass filters with ESD protections on P+ silicon/porous silicon substrates

M Capelle, J Billoue, J Concord, P Poveda… - Solid-State …, 2016 - Elsevier
This work reports that silicon/porous silicon mixed substrates can be successfully used for
monolithic integration of RadioFrequency (RF) passive and active devices. To validate this …

Porous Si as a substrate for the monolithic integration of RF and millimeter-wave passive devices (transmission lines, inductors, filters, and antennas): Current state-of …

P Sarafis, AG Nassiopoulou - Applied Physics Reviews, 2017 - pubs.aip.org
The increasing need for miniaturization, reliability, and cost efficiency in modern
telecommunications has boosted the idea of system-on-chip integration, incorporating the …