Physics of thin-film ferroelectric oxides
This review covers important advances in recent years in the physics of thin-film ferroelectric
oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film …
oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film …
Evolution of Ge islands on Si (001) during annealing
TI Kamins, G Medeiros-Ribeiro, DAA Ohlberg… - Journal of Applied …, 1999 - pubs.aip.org
The evolution of the shape and size distributions of Ge islands on Si (001) during annealing
after deposition has been studied at different temperatures and effective coverages. The …
after deposition has been studied at different temperatures and effective coverages. The …
SiGe intermixing in Ge/Si (100) islands
We have applied atomic force microscopy and x-ray photoemission spectroscopy to the
study of SiGe intermixing in Ge/Si (100) self-assembled islands. We have quantified the …
study of SiGe intermixing in Ge/Si (100) self-assembled islands. We have quantified the …
Equilibrium nano-shape changes induced by epitaxial stress (generalised Wulf–Kaishew theorem)
P Müller, R Kern - Surface science, 2000 - Elsevier
A generalised Wulf–Kaishew theorem is given describing the equilibrium shape (ES) of an
isolated 3D crystal A deposited coherently onto a lattice mismatched planar substrate. For …
isolated 3D crystal A deposited coherently onto a lattice mismatched planar substrate. For …
Characterization of α-and β-RDX polymorphs in crystalline deposits on stainless steel substrates
AM Figueroa-Navedo, JL Ruiz-Caballero… - Crystal Growth & …, 2016 - ACS Publications
The highly energetic material (HEM) hexahydro-1, 3, 5-trinitro-s-triazine, also known as
RDX, has two stable conformational polymorphs at room temperature: α-RDX (molecular …
RDX, has two stable conformational polymorphs at room temperature: α-RDX (molecular …
Formation of self-assembled quantum dots induced by the Stranski–Krastanow transition: a comparison of various semiconductor systems
H Mariette - Comptes Rendus Physique, 2005 - Elsevier
To account for the occurrence (or not) of the Stranski–Krastanow (SK) transition (two-
dimensional to 3D change of surface morphology) during the epitaxial growth of various …
dimensional to 3D change of surface morphology) during the epitaxial growth of various …
Equilibrium nano-shape changes induced by epitaxial stress (generalised Wulf-Kaishew theorem)
P Muller, R Kern - arxiv preprint arxiv:0706.3190, 2007 - arxiv.org
A generalised Wulf-Kaishew theorem is given describing the equilibrium shape (ES) of an
isolated 3D crystal A deposited coherently onto a lattice mismatched planar substrate. For …
isolated 3D crystal A deposited coherently onto a lattice mismatched planar substrate. For …
Key parameters for the formation of II–VI self-assembled quantum dots
To account for the occurrence or absence of the Stranski–Krastanow (SK) transition (two-
dimensional to three-dimensional change (2D–3D) of surface morphology) during the …
dimensional to three-dimensional change (2D–3D) of surface morphology) during the …
Nucleation and growth of self-assembled Ge/Si (001) quantum dots
V Le Thanh, P Boucaud, D Débarre, Y Zheng… - Physical Review B, 1998 - APS
In situ reflection high-energy electron diffraction along with atomic-force microscopy and
photoluminescence spectroscopy have been used to investigate the Ge/Si (001) growth …
photoluminescence spectroscopy have been used to investigate the Ge/Si (001) growth …
Intermixing-promoted scaling of Ge/Si (100) island sizes
The knowledge of the actual composition of selfassembled islands and the possibility of
controlling their size and size uniformity are crucial steps toward their use for fabricating new …
controlling their size and size uniformity are crucial steps toward their use for fabricating new …