Non-and semipolar GaN-based optoelectronic device structures have attracted much
attention in recent years. Best results have been obtained on small bulk substrates cut from …

We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown
on m-plane sapphire using a three-step growth method which consisted of a low …

The anisotropy of GaN (11-20) makes it possible to fabricate polarized ultraviolet (UV)
photodetectors (PDs) for applications in fields such as remote sensing and airborne …

Semiconductor materials play a crucial role in the development of optoelectronics and
power devices. However, their evaluation and selection pose a multi-attribute decision …

Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope
(SEM) is a rapid and non-destructive structural characterisation technique for imaging …

Tuning the surface structure of the photoelectrode provides one of the most effective ways to
address the critical challenges in artificial photosynthesis, such as efficiency, stability, and …

High-temperature annealing (HTA) has been recognized as an available method to
annihilate the domain boundaries and improve the crystalline quality of AlN films. Here …

We report on the selective area growth of semipolar (11-22) GaN epilayers on wet etched r-
plane patterned sapphire substrates (PSS) by metal organic chemical vapor deposition …

This letter reports a two-step growth process for improving microstructural quality of
semipolar (11 2 ̱ 2) GaN on nitridized m-plane sapphire. The two-step growth of (11 2 ̱ 2) …

In this paper, we report a detailed study on the evolution of surface morphology and
microstructure of nonpolar a-plane GaN (a-GaN) through controlled growth interruptions …