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Recent advances and future prospects for memristive materials, devices, and systems
Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
The fundamentals and applications of ferroelectric HfO2
Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …
have attracted much interest from the ferroelectric materials and devices community …
Ferroelectric order in van der Waals layered materials
Structurally different from conventional oxide ferroelectrics with rigid lattices, van der Waals
(vdW) ferroelectrics have stable layered structures with a combination of strong intralayer …
(vdW) ferroelectrics have stable layered structures with a combination of strong intralayer …
Wurtzite and fluorite ferroelectric materials for electronic memory
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …
continued research interest since their discovery more than 100 years ago. The …
Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides
Two-dimensional materials with out-of-plane (OOP) ferroelectric and piezoelectric properties
are highly desirable for the realization of ultrathin ferro-and piezoelectronic devices. We …
are highly desirable for the realization of ultrathin ferro-and piezoelectronic devices. We …
Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors
With the scaling of lateral dimensions in advanced transistors, an increased gate
capacitance is desirable both to retain the control of the gate electrode over the channel and …
capacitance is desirable both to retain the control of the gate electrode over the channel and …
An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning
The growing computational demand in artificial intelligence calls for hardware solutions that
are capable of in situ machine learning, where both training and inference are performed by …
are capable of in situ machine learning, where both training and inference are performed by …
The future of ferroelectric field-effect transistor technology
The discovery of ferroelectricity in oxides that are compatible with modern semiconductor
manufacturing processes, such as hafnium oxide, has led to a re-emergence of the …
manufacturing processes, such as hafnium oxide, has led to a re-emergence of the …
Interfacial ferroelectricity by van der Waals sliding
Despite their partial ionic nature, many-layered diatomic crystals avoid internal electric
polarization by forming a centrosymmetric lattice at their optimal van der Waals stacking …
polarization by forming a centrosymmetric lattice at their optimal van der Waals stacking …
Emergent ferroelectricity in subnanometer binary oxide films on silicon
The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …