Review of RF Device Behavior Model: Measurement Techniques, Applications, and Challenges
H Li, J Su, R Wang, Z Liu, M Xu - Micromachines, 2023 - mdpi.com
This review presents a concise overview of RF (radio frequency) power transistor behavior
models, which is crucial for optimizing RF performance in high-frequency applications like …
models, which is crucial for optimizing RF performance in high-frequency applications like …
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trap**, and Reliability
Application of gallium nitride high-electron-mobility transistors (GaN HEMTs) to millimeter-
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
Trap** dynamics in GaN HEMTs for millimeter-wave applications: Measurement-based characterization and technology comparison
Charge trap** effects represent a major challenge in the performance evaluation and the
measurement-based compact modeling of modern short-gate-length (ie,≤ 0.15 μm) Gallium …
measurement-based compact modeling of modern short-gate-length (ie,≤ 0.15 μm) Gallium …
Experimental characterization of charge trap** dynamics in 100-nm AlN/GaN/AlGaN-on-Si HEMTs by wideband transient measurements
This article deals with the characterization of charge trap** dynamics in a novel 100-nm
double-heterojunction AlN/GaN/AlGaN-on-Si radio frequency (RF) HEMT process. In order …
double-heterojunction AlN/GaN/AlGaN-on-Si radio frequency (RF) HEMT process. In order …
Broadband error vector magnitude characterization of a GaN power amplifier using a vector network analyzer
This work investigates the impact of nonlinear dynamic effects due to charge trap** and
other long-memory phenomena on the wideband linearity of power amplifiers (PAs) for 5G …
other long-memory phenomena on the wideband linearity of power amplifiers (PAs) for 5G …
Error vector magnitude measurement for power amplifiers under wideband load impedance mismatch: System-level analysis and VNA-based implementation
Abstract The Error Vector Magnitude (EVM) is a fundamental metric used in communications
to quantify the wideband distortion generated by a non-linear device subject to modulated …
to quantify the wideband distortion generated by a non-linear device subject to modulated …
On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices
The GaN-on-Si technology for the upcoming RF/6G/mm-Wave applications requires a robust
buffer design for enhanced device performance and improved reliability. The defect states …
buffer design for enhanced device performance and improved reliability. The defect states …
A Reconfigurable Setup for the On-Wafer Characterization of the Dynamic RON of 600 V GaN Switches at Variable Operating Regimes
Charge-trap** mechanisms observed in high-voltage GaN switches are responsible for
the degradation of power converter efficiency due to modulation of the effective dynamic ON …
the degradation of power converter efficiency due to modulation of the effective dynamic ON …
A study on the optimized ohmic contact process of AlGaN/GaN-Si MIS-HEMTs
H Guan, G Shen, B Gao, H Zhang, Y Wang… - IEEE Access, 2021 - ieeexplore.ieee.org
AlGaN/GaN-Si based MIS-HEMTs are considered as the popular candidates for application
in the 5G communication system due to their competitive characteristics and low cost. Ohmic …
in the 5G communication system due to their competitive characteristics and low cost. Ohmic …
Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy
GaN on Si plays an important role in the integration and promotion of GaN-based widegap
materials with Si-based integrated circuits (IC) technology. A series of GaN film materials …
materials with Si-based integrated circuits (IC) technology. A series of GaN film materials …