Bottom-up meets top down: An integrated approach for nano-scale devices

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Characterization of silane based ultra-thin barrier deposited at elevated temperature

K Kadan-Jamal, RO Almog, J Zhou, T Dotan… - Microelectronic …, 2021 - Elsevier
In this work, we describe a quick turn-around characterization approach of ultra-thin layers
on low dielectric constant (Low-K) interlevel dielectric using Electrochemical Impedance …
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Vapor phase self-assembly of metal-porphyrins for controllable work function tuning

TR Naik, M Ravikanth, VR Rao - 2017 IEEE 12th International …, 2017 - ieeexplore.ieee.org
A novel process for self-assembly of metal-porphyrins on oxide dielectrics is developed and
utilized for continuous work function tuning. Simply by changing the central metal atom …
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a-InGaZnO Thin-film Transistor as an Oxygen Gas Sensor with In-Situ Electrical Characterization

TR Naik, MB Zalte, MS Baghini - 2020 5th IEEE International …, 2020 - ieeexplore.ieee.org
Wide band gap metal oxide semiconductors have been explored for a plethora of
applications in recent years 1. Thin film transistors (TFTs) especially have found extensive …
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Effect of X-ray irradiation on bottom-gate monolayer graphene transistors

V Shinde, TR Naik, A Gajarushi… - 2016 3rd International …, 2016 - ieeexplore.ieee.org
In this paper we discuss the effects of x-ray irradiation on monolayer graphene transistor
characteristics. We report monolayer graphene field effect transistors (GFETs) under x-ray …
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