The electrical behaviors of the Schottky structures with a ruthenium dioxide (RuO 2) doped-
polyvinyl chloride (PVC) interface were executed with a wide frequency range (from 1 kHz to …

In this present study, the electrical parameters of Al/p-Si (MS) structures with (Ti-doped DLC)
interfacial layer were investigated between 1 kHz and 4 MHz utilizing impedance …

In the present study, voltage-dependent variation of the interface traps (D it) and series
resistance (R s) and their effects on the electrical features of a Schottky structure with CdZnO …

The cadmium sulfide (CdS) nanopowders have been prepared by ball-milling method, and
CdS-polyvinyl alcohol (PVA) nanocompound in the form of film has been deposited on a p …

In this study, frequency-dependent physical parameters, voltage-dependent of surface
traps/states, and their lifetime of the Au/(ZnCdS-GO: PVP)/n-Si (MPS) type structures were …

The effect of 60 Co-iradiation) on the electrical parameters in the Au/(ZnOMn: PVP)/n-Si SDs
have been investigated using the current-voltage (I–V) and capacitance/conductance …

Abstract Au/n-GaAs (MS) type Schottky diodes (SDs) were fabricated with and without pure
and Gr-doped PVA interlayer to evaluate the effects of Gr-doped PVA interlayer on the basic …

To increase the performance of the metal–semiconductor (MS) structure, MS and pure
polyvinyl-pyrrolidine (PVP), Gr,(ZnTiO3) and (Gr-ZnTiO3)-doped PVP interlayer were formed …

This paper reports the frequency dependence of admittance measurements ie C–V and G/ω–
V characteristics of Al/Al 2 O 3/PVA: n-ZnSe MIS diode. The interface states (N ss) and series …

To determine the impact of pure and (PVC: SnS) interlayers on the electrophysical features
of Schottky barrier diodes (SBDs), Au/n-Si, Au/PVC/n-Si, and Au/(PVC: SnS)/n-Si structures …