It is well-established that oxide defects adversely affect functionality and reliability of a wide
range of microelectronic devices. In semiconductor-insulator systems, insulator defects can …

Different physics-based negative bias temperature instability (NBTI) models as proposed in
the literature are reviewed, and the predictive capability of these models is benchmarked …

In the history of electronics, solid-state materials replaced the vacuum parts to reduce power
consumption and to obtain better reliability at a reduced cost. The size of solid-state …

Reaction-Diffusion (RD) framework for interface trap generation along with hole trap** in
pre-existing and generated bulk oxide traps are used to model Negative Bias Temperature …

A common framework of trap generation and trap** is used to explain Negative Bias
Temperature Instability (NBTI) and Positive Bias Temperature Instability (PBTI) DC and AC …

Bias Temperature Instability (BTI) is a serious reliability concern and continues to threaten
the performance and lifetime of Complementary MOS (CMOS) devices and circuits. BTI …

Negative bias temperature instability (NBTI) is a serious reliability concern for pMOS
transistors. Although discovered more than 40 years ago, the phenomenon remains highly …

Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …

It is commonly accepted that the performance and time-to-failure of modern semiconductor
transistors are seriously affected by single defects located in the insulator or at the insulator …

In this paper, a simple phenomenological technique is used to isolate the hole-trap** and
interface trap generation components during negative bias temperature instability (NBTI) …