Ultra-thin wafers with thickness of typically less than 200 μm are important building blocks in
semiconductor device manufacturing. Due to the special mechanical properties of ultra-thin …

US11114332B2 - Semiconductor on insulator structure comprising a plasma nitride layer and
method of manufacture thereof - Google Patents US11114332B2 - Semiconductor on insulator …

FinFET is a multiple-gate silicon transistor structure that nowadays is attracting an extensive
attention to progress further into the nanometer era by going beyond the downscaling limit of …

We present high-performance shear horizontal surface acoustic wave (SH-SAW) and
longitudinal leaky SAW (LL-SAW) devices using lithium tantalate (LiTaO3) thin films on …

This article presents shear horizontal surface acoustic wave (SH-SAW) devices with
excellent temperature stability and low loss on ultrathin Y42-cut lithium tantalate film on …

Harmonic distortion (HD) is measured arising from coplanar waveguide structures on
various substrates at 900 MHz, and significant distortion for silicon substrates is …

Silicon substrates are widely used in the manufacture of semiconductor devices. Low cost
and highly evolved manu facturing techniques make Silicon a preferred material in many …

The present disclosure relates to enhancing the thermal performance of encapsulated flip
chip dies. According to an exemplary process, a plurality of flip chip dies are attached on a …

The shear horizontal surface acoustic wave (SH-SAW) resonators with excellent quality
factor and temperature stability were fabricated on 42° YX-LiTaO3/SiO2/sapphire substrate …

In this paper, the nonlinear behavior of coplanar waveguide (CPW) transmission lines
fabricated on Si and high-resistivity (HR) Si substrates is thoroughly investigated …