Band parameters for nitrogen-containing semiconductors
We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
Y Taniyasu, M Kasu, T Makimoto - nature, 2006 - nature.com
Compact high-efficiency ultraviolet solid-state light sources—such as light-emitting diodes
(LEDs) and laser diodes—are of considerable technological interest as alternatives to large …
(LEDs) and laser diodes—are of considerable technological interest as alternatives to large …
[BOOK][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Overview of band-edge and defect related luminescence in aluminum nitride
T Koppe, H Hofsäss, U Vetter - Journal of Luminescence, 2016 - Elsevier
This review gives the reader an overview of the published results describing near band-
edge as well as defect related luminescence in aluminum nitride, also presenting findings …
edge as well as defect related luminescence in aluminum nitride, also presenting findings …
Band structure and fundamental optical transitions in wurtzite AlN
With a recently developed unique deep ultraviolet picoseconds time-resolved
photoluminescence (PL) spectroscopy system and improved growth technique, we are able …
photoluminescence (PL) spectroscopy system and improved growth technique, we are able …
Deep-ultraviolet light-emitting diodes
Compact solid-state deep-ultraviolet (DUV) light-emitting diodes (LEDs) go far beyond
replacing conventional DUV sources such as mercury lamps. DUV LEDs enable new …
replacing conventional DUV sources such as mercury lamps. DUV LEDs enable new …
Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
H Hirayama - Journal of Applied Physics, 2005 - pubs.aip.org
In order to realize 250–350-nm-band high-efficiency deep ultraviolet (UV) emitting devices
using group-III-nitride materials, it is necessary to obtain high-efficiency UV emission from …
using group-III-nitride materials, it is necessary to obtain high-efficiency UV emission from …
High-excitation and high-resolution photoluminescence spectra of bulk AlN
M Feneberg, RAR Leute, B Neuschl, K Thonke… - Physical Review B …, 2010 - APS
Photoluminescence spectra of high-quality bulk AlN crystals are reported. In addition to the
expected linear luminescence features like free excitons and donor-bound excitons …
expected linear luminescence features like free excitons and donor-bound excitons …
Blue-emitting AlN: Eu2+ nitride phosphor for field emission displays
An Eu 2+-activated AlN phosphor was synthesized by firing the powder mixture of AlN, α-Si
3 N 4, and Eu 2 O 3 at 2050 C for 4 h under 1.0 MPa N 2. This nitride phosphor emits a …
3 N 4, and Eu 2 O 3 at 2050 C for 4 h under 1.0 MPa N 2. This nitride phosphor emits a …
[HTML][HTML] Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center
The below bandgap optical transitions of an aluminum nitride (AlN) crystal grown on a
tungsten (W) substrate by physical vapor transport (PVT) are investigated by below-bandgap …
tungsten (W) substrate by physical vapor transport (PVT) are investigated by below-bandgap …