InAs/(In, Ga) Sb type‐II strained layer superlattices (T2SLs) have made significant progress
since they were first proposed as an infrared (IR) sensing material more than three decades …

Antimonide semiconductors are suitable for low-power electronics and long-wavelength
optoelectronic applications. In recent years research on antimonide nanowires has become …

Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing,
spectroscopy and imaging technologies in the decades to come. THz emitters and receivers …

We present electrical characterization of GaSb/InAs (Sb) nanowire tunnel field-effect
transistors. The broken band alignment of the GaSb/InAs (Sb) heterostructure is exploited to …

Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-
tunable GaAs1–x Sb x nanowires by molecular-beam epitaxy. GaAs1–x Sb x nanowires with …

CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …

The ever-growing demand on high-performance electronics has generated transistors with
very impressive figures of merit (Radosavljevic et al., IEEE Int. Devices Meeting 2009, 1–4 …

CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …

In this work we have developed InAs nanowire templates, with designed zinc blende and
wurtzite segments, for selective growth of radial GaSb heterostructures using metal organic …

In this report, we present the growth and structural analyses of broken gap InAs/GaSb core–
shell nanowires by molecular beam epitaxy using an Au-free approach. Depending on the …