InAs/GaSb Type‐II Superlattice Detectors
EA Plis - Advances in Electronics, 2014 - Wiley Online Library
InAs/(In, Ga) Sb type‐II strained layer superlattices (T2SLs) have made significant progress
since they were first proposed as an infrared (IR) sensing material more than three decades …
since they were first proposed as an infrared (IR) sensing material more than three decades …
Synthesis and properties of antimonide nanowires
BM Borg, LE Wernersson - Nanotechnology, 2013 - iopscience.iop.org
Antimonide semiconductors are suitable for low-power electronics and long-wavelength
optoelectronic applications. In recent years research on antimonide nanowires has become …
optoelectronic applications. In recent years research on antimonide nanowires has become …
Near Full-Composition-Range High-Quality GaAs1–xSbx Nanowires Grown by Molecular-Beam Epitaxy
Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-
tunable GaAs1–x Sb x nanowires by molecular-beam epitaxy. GaAs1–x Sb x nanowires with …
tunable GaAs1–x Sb x nanowires by molecular-beam epitaxy. GaAs1–x Sb x nanowires with …
High-current GaSb/InAs (Sb) nanowire tunnel field-effect transistors
We present electrical characterization of GaSb/InAs (Sb) nanowire tunnel field-effect
transistors. The broken band alignment of the GaSb/InAs (Sb) heterostructure is exploited to …
transistors. The broken band alignment of the GaSb/InAs (Sb) heterostructure is exploited to …
III–V/Ge channel MOS device technologies in nano CMOS era
CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …
promising devices for high-performance and low power advanced LSIs in the future …
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
The ever-growing demand on high-performance electronics has generated transistors with
very impressive figures of merit (Radosavljevic et al., IEEE Int. Devices Meeting 2009, 1–4 …
very impressive figures of merit (Radosavljevic et al., IEEE Int. Devices Meeting 2009, 1–4 …
Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires
Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing,
spectroscopy and imaging technologies in the decades to come. THz emitters and receivers …
spectroscopy and imaging technologies in the decades to come. THz emitters and receivers …
III-V/Ge MOS device technologies for low power integrated systems
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …
promising devices for high performance and low power integrated systems in the future …
Selective GaSb radial growth on crystal phase engineered InAs nanowires
L Namazi, M Nilsson, S Lehmann, C Thelander… - Nanoscale, 2015 - pubs.rsc.org
In this work we have developed InAs nanowire templates, with designed zinc blende and
wurtzite segments, for selective growth of radial GaSb heterostructures using metal organic …
wurtzite segments, for selective growth of radial GaSb heterostructures using metal organic …
Misfit dislocation free InAs/GaSb core–shell nanowires grown by molecular beam epitaxy
In this report, we present the growth and structural analyses of broken gap InAs/GaSb core–
shell nanowires by molecular beam epitaxy using an Au-free approach. Depending on the …
shell nanowires by molecular beam epitaxy using an Au-free approach. Depending on the …