The most successful example of large lattice-mismatched epitaxial growth of semiconductors
is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and …

This paper reports an investigation of the physical origin of the thermal droop (the drop of the
optical power at high temperatures) in InGaN-based light-emitting diodes. We critically …

A novel hybrid inorganic/organic semiconductor nanostructure has been developed, leading
to very efficient nonradiative resonant-energy-transfer (RET) between blue emitting …

Wavelength‐tunable light‐emitting diodes (LEDs) of GaxZn1–xO nanowire arrays are
demonstrated by a simple modified chemical vapor deposition heteroepitaxial growth on p …

Abstract Two-dimensional InGaN/GaN multiple-quantum-wells (MQW) LED structure was
nanotextured into quasi-one-dimensional nanowires (NWs) with different average diameters …

We show over 100-fold enhancement of the exciton oscillator strength as the diameter of an
InGaN nanodisk in a GaN nanopillar is reduced from a few micrometers to less than 40 nm …

A series of highly ordered c-plane InGaN/GaN elliptic nanorod (NR) arrays were fabricated
by our developed soft UV-curing nanoimprint lithography on a wafer. The …

InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint
and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The …

In this paper, AlInN nanowire ultraviolet light-emitting diodes (LEDs) with emission at∼ 299
nm have been successfully demonstrated. We have further studied the light extraction …

We report on the carrier dynamics in InGaN/GaN dot-in-nanowire quantum dots, revealed by
a systematic map** between the optical properties and structural parameters of the …