We summarize the recipes and describe the role of sputtering parameters in producing
highly c-axis Aluminum Nitride (AlN) films for piezoelectric applications. The information is …

This study investigates the structural and optical characteristics of aluminum nitride (AlN)
thin films deposited using reactive magnetron sputtering (dcMS) in an Ar+ N2 (80: 20%) …

Amongst the piezoelectric thin films suited for microelectromechanical systems (MEMS), AlN
has gained particular technological relevance due to its unique material properties (large …

Glancing angle deposition (GLAD) of AlN nanostructures was performed at room
temperature by reactive magnetron sputtering in a mixed gas atmosphere of Ar and N2. The …

Simultaneously inducing preferred crystalline orientation with a strong piezoelectric
response in polycrystalline aluminum nitride (AlN) thin films by atomic layer deposition is a …

Wurtzite aluminum nitride (AlN) films with (1 0 0) and (0 0 2) preferred orientations are
obtained on Si (1 0 0) wafers by radio frequency magnetron sputtering. The effects of target …

The crystal orientation of aluminium nitride (AlN) thin film poses a challenge in piezoelectric
applications, where the orientation of (002) is desired for obtaining a high piezoelectric …

The aluminum nitride (AlN) powder/thin films were prepared from an aluminum–urea
complex. The complex, hexa urea aluminate (III) chloride, has proven to be a potential single …

AlN is a piezoelectric material used in telecommunication applications due to its high
surface acoustic wave (SAW) velocity, stability, and mechanical strength. Its performance is …

Scandium aluminum nitride (ScAlN) films are promising piezoelectric materials for various
microelectromechanical systems. However, residual stress in ScAlN films is a serious …