Method for fabricating a semiconductor structure including a metal oxide interface with silicon
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Walther 3,802,967 A 4/1974 Ladany et al. 3,914,137 A 10/1975 Huffman et al. 3,935,031 A …
Walther 3,802,967 A 4/1974 Ladany et al. 3,914,137 A 10/1975 Huffman et al. 3,935,031 A …
Apparatus for image projection
M Grabert - US Patent 7,133,022, 2006 - Google Patents
The invention is directed to a solid-state projection device incorporating a light source,
modulator, and control circuitry on a single chip. For example, projection device may include …
modulator, and control circuitry on a single chip. For example, projection device may include …
Reconfigurable systems using hybrid integrated circuits with optical ports
MG Taylor, CW Shanley, WJ Ooms - US Patent 6,410,941, 2002 - Google Patents
A hybrid integrated circuit is provided that has a monocrystalline substrate such as silicon
and a compound semiconductor layer such as gallium arsenide or indium phosphide. An …
and a compound semiconductor layer such as gallium arsenide or indium phosphide. An …
Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
RM Emrick, SK Rockwell, JE Holmes - US Patent 6,646,293, 2003 - Google Patents
3,914,137 3,935,031 4,006,989 4,084,130 4,120,588 4,146.297 4,174,422 4,242,595
4,284,329 4,289.920 4,297,656 4,392.297 4,398,342 4,404.265 4,424,589 4,439,014 …
4,284,329 4,289.920 4,297,656 4,392.297 4,398,342 4,404.265 4,424,589 4,439,014 …
Integrated circuits with optical signal propagation
CW Shanley - US Patent 6,477,285, 2002 - Google Patents
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Thorton et al................ 372/50 5,830.270 A 11/1998 McKee et al. 4,815,084. A 3/1989 Scifres …
Thorton et al................ 372/50 5,830.270 A 11/1998 McKee et al. 4,815,084. A 3/1989 Scifres …
Optical waveguide structure and method for fabricating the same
AA Talin, SA Voight - US Patent 7,020,374, 2006 - Google Patents
An optical Waveguide structure (10) is provided. The optical Waveguide structure (10) has a
monocrystalline substrate (12), an amorphous interface layer (14) overlying the …
monocrystalline substrate (12), an amorphous interface layer (14) overlying the …
Ferromagnetic semiconductor structure and method for forming the same
Y Liang, R Droopad, H Li, Z Yu - US Patent 6,885,065, 2005 - Google Patents
US6885065B2 - Ferromagnetic semiconductor structure and method for forming the same -
Google Patents US6885065B2 - Ferromagnetic semiconductor structure and method for forming …
Google Patents US6885065B2 - Ferromagnetic semiconductor structure and method for forming …
Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
R Droopad - US Patent 6,673,646, 2004 - Google Patents
3,935.031 A 1/1976 Adler grown on patterned oxide layerS deposited on Silicon. The
4006989 A 2/1977 Andringa deposition of Group II-VI and Group II-V compound 4,084,130 A …
4006989 A 2/1977 Andringa deposition of Group II-VI and Group II-V compound 4,084,130 A …
Wavelength and polarization multiplexed vertical cavity surface emitting lasers
RL Thornton - US Patent 6,002,705, 1999 - Google Patents
The present invention relates to a vertical cavity surface emitting laser device comprising a
plurality of semiconductor layers formed upon a substrate and capable of emitting a laser …
plurality of semiconductor layers formed upon a substrate and capable of emitting a laser …
Semiconductor structure including a partially annealed layer and method of forming the same
K Eisenbeiser, BM Foley, JM Finder… - US Patent …, 2003 - Google Patents
US Cl........................ 438/481; 438/606; 438/607; 117/101; 117/105; 117/108 High quality
epitaxial layers of compound Semiconductor materials can be grown overlying large Silicon …
epitaxial layers of compound Semiconductor materials can be grown overlying large Silicon …