Embedded nanoparticle dynamics and their influence on switching behaviour of resistive memory devices
Resistively switching Conductive Bridge Random Access Memories (CBRAMs) rely on the
controlled formation and dissolution of metallic filaments within a solid insulator, and are …
controlled formation and dissolution of metallic filaments within a solid insulator, and are …
Total ionizing dose and single event effects of 1 Mb HfO2-based resistive-random-access memory
J Bi, Y Duan, K **, B Li - Microelectronics Reliability, 2018 - Elsevier
Experiments of total ionizing dose (TID) using a Cobalt-60 source and single event effects
(SEE) using pulsed laser and heavy ion were conducted to investigate the radiation effects …
(SEE) using pulsed laser and heavy ion were conducted to investigate the radiation effects …
Functionalization of transparent oxide resistive random-access memories for visible light photosensitivity
PS Kalaga - 2021 - dr.ntu.edu.sg
Resistive Random-Access Memory (RRAM) by virtue of its simple metal-insulator-metal
structure, high scalability, excellent device density and the potential to become a future …
structure, high scalability, excellent device density and the potential to become a future …
Time-Resolved Imaging of Electrochemical Switching in Nanoscale Resistive Memory Elements
FLASH memory is reaching its scaling limit, but resistive random access memory (ReRAM)
is considered a promising successor [1]. In ReRAM, metal electrodes sandwiching an …
is considered a promising successor [1]. In ReRAM, metal electrodes sandwiching an …