Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …

Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses
approaching the unit cell level. When this spatial confinement is combined with observations …

Two-dimensional (2D) ferroelectrics, which are rare in nature, enable high-density
nonvolatile memory with low energy consumption. Here, we propose a theory of bilayer …

Ferroelectric domain wall memories have been proposed as a promising candidate for
nonvolatile memories, given their intriguing advantages including low energy consumption …

Since its inception more than 25 years ago, Piezoresponse Force Microscopy (PFM) has
become one of the mainstream techniques in the field of nanoferroic materials. This review …

Abstract Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile
memory and logic technologies in which domain walls, rather than domains, serve as an …

Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …

Topological spin/polarization structures in ferroic materials continue to draw great attention
as a result of their fascinating physical behaviors and promising applications in the field of …

Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and
can be reversed by an externally-applied field. This high versatility makes them useful in …

Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to
electronic properties distinct from the bulk that can also be electrically programmed. These …