Dilute ferromagnetic semiconductors: Physics and spintronic structures
This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …
Growth, strain, and spin-orbit torques in epitaxial Ni-Mn-Sb films sputtered on GaAs
We report current-induced spin torques in epitaxial NiMnSb films on a commercially
available epiready GaAs substrate. The NiMnSb was grown by cosputtering from three …
available epiready GaAs substrate. The NiMnSb was grown by cosputtering from three …
Detection of stacking faults breaking the [110]/[10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)
M Kopecký, J Kub, F Máca, J Mašek, O Pacherová… - Physical Review B …, 2011 - APS
We report on high-resolution x-ray diffraction measurements of (Ga, Mn) As and (Ga, Mn)(As,
P) epilayers. We observe a structural anisotropy in the form of stacking faults that are present …
P) epilayers. We observe a structural anisotropy in the form of stacking faults that are present …
Strain field in (Ga, Mn) As/GaAs periodic wires revealed by coherent x-ray diffraction
An experimental and simulation study of the full strain tensor and of strain-induced
magnetocrystalline anisotropies in arrays of lithographically patterned (Ga, Mn) As on GaAs …
magnetocrystalline anisotropies in arrays of lithographically patterned (Ga, Mn) As on GaAs …
Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19
We investigate the role of lithographically-induced strain relaxation in a micron-scaled
device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81Ga19. The strain …
device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81Ga19. The strain …
Magnetic anisotropy control in Ga1− xMnxAs magnetic semiconductors
S Stagraczyński, C Jasiukiewicz, VK Dugaev… - Journal of Magnetism …, 2016 - Elsevier
Using the six-band Kane model of the electron energy spectrum in the valence band of
GaMnAs magnetic semiconductor we investigate the dependence of the crystalline magnetic …
GaMnAs magnetic semiconductor we investigate the dependence of the crystalline magnetic …
Robust Manipulation of Magnetic Properties in (Ga, Mn) As
H Wang, J Zhao - Spintronics: Materials, Devices and …, 2022 - Wiley Online Library
As one of the representative materials in the field of semiconductor spintronics, dilute
magnetic semiconductor (Ga, Mn) As has been intensively studied for more than two …
magnetic semiconductor (Ga, Mn) As has been intensively studied for more than two …
Spin transport and magnetoresistance in magnetic thin films with inversion broken crystals and multi-layers
N Zhao - 2023 - discovery.ucl.ac.uk
This thesis firstly investigates spin-orbit torques (SOTs) generated by microwave current and
detected by ferromagnetic resonance (FMR) spectroscopy in a uniform ferromagnetic …
detected by ferromagnetic resonance (FMR) spectroscopy in a uniform ferromagnetic …
[PDF][PDF] Room temperature spin injection in a light-emitting diode based on a GaMnSb/n-GaAs/InGaAs tunnel junction
AV Zdoroveyshchev, AV Kudrin, YA Danilov - scholar.archive.org
The circularly polarized electroluminescence from an InGaAs/GaAs light-emitting diode with
a (Ga, Mn) Sb/n+GaAs tunnel junction was investigated in the temperature range of 10-300 …
a (Ga, Mn) Sb/n+GaAs tunnel junction was investigated in the temperature range of 10-300 …
Study of the structure of ferromagnetic semiconductors by x-ray scattering methods
L Horák - 2014 - dspace.cuni.cz
We studied epitaxial layers of Gallium Manganese Arsenide by various x-ray scattering
methods. Since the positions of the Mn dopant in the a host GaAs lattice are crucial for …
methods. Since the positions of the Mn dopant in the a host GaAs lattice are crucial for …