Conventional di/dt and dv/dt control and gate protection techniques for gallium nitride (GaN)
power transistors usually employ external controllers, isolation circuits, discrete pull-up, and …

This article proposes a high-frequency integrated gate driver for gallium nitride (GaN)
synchronous buck converter. The proposed adaptive bang-bang dead-time control …

Benefiting from the gallium nitride (GaN) monolithic process, a half-bridge power IC can fully
unlock the high-speed capabilities of GaN devices by integrating drive circuits and power …

GaN devices operating at reverse conduction region causing excessive conduction loss.
Therefore, the GaN based switching converters are required to minimize the dead-time. This …

This paper proposes a high-speed gate driver integrated circuit (IC) for gallium nitride (GaN)
synchronous buck converter which includes an adaptive bang-bang deadtime modulator to …

Power integrity issues and voltage fluctuations on power rails in emerging system-in-
packages (SiP) that integrate switch-mode converters can impede the performances of …

The objective of this work is to show the intrinsic limitations of a CMOS technology for the
realization of an Active Gate Driver (AGD) with an active dv/dt control loop. Due to a …

With the growing demands for high frequency, high temperature, and high power density
applications in power electronics industry, silicon is reaching its theoretical limits. Wide band …

The gate driver design for power semiconductor devices affects overall efficiency and
performance. This research presented an AGD (active gate driver) that detects the Miller …

In this work, we present the design of an energy-efficient buck converter leveraging a new
custom integrated reconfigurable Asymmetric Deadtime Generator (ADG). This design …