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Dilute ferromagnetic semiconductors: Physics and spintronic structures
This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …
Spin-dependent phenomena and device concepts explored in (Ga, Mn) As
Over the past two decades, the research of (Ga, Mn) As has led to a deeper understanding
of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …
of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …
Enhancing the Curie temperature of ferromagnetic semiconductor (Ga, Mn) As to 200 K via nanostructure engineering
We demonstrate by magneto-transport measurements that a Curie temperature as high as
200 K can be obtained in nanostructures of (Ga, Mn) As. Heavily Mn-doped (Ga, Mn) As …
200 K can be obtained in nanostructures of (Ga, Mn) As. Heavily Mn-doped (Ga, Mn) As …
New diluted ferromagnetic semiconductor with Curie temperature up to 180 K and isostructural to the '122'iron-based superconductors
K Zhao, Z Deng, XC Wang, W Han, JL Zhu, X Li… - Nature …, 2013 - nature.com
Diluted magnetic semiconductors have received much attention due to their potential
applications for spintronics devices. A prototypical system (Ga, Mn) As has been widely …
applications for spintronics devices. A prototypical system (Ga, Mn) As has been widely …
Achieving high curie temperature in (Ga, Mn) As
We study the effects of growth temperature, Ga: As ratio, and postgrowth annealing
procedure on the Curie temperature TC of (Ga, Mn) As layers grown by molecular beam …
procedure on the Curie temperature TC of (Ga, Mn) As layers grown by molecular beam …
Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga, Mn) As films with high ferromagnetic transition temperature
We report the low-temperature magnetotransport behaviors of (Ga, Mn) As films with the
nominal Mn concentration x larger than 10%. The ferromagnetic transition temperature TC …
nominal Mn concentration x larger than 10%. The ferromagnetic transition temperature TC …
A review of thermal processing in the subsecond range: semiconductors and beyond
L Rebohle, S Prucnal, W Skorupa - Semiconductor Science and …, 2016 - iopscience.iop.org
Thermal processing in the subsecond range comprises modern, non-equilibrium annealing
techniques which allow various material modifications at the surface without affecting the …
techniques which allow various material modifications at the surface without affecting the …
Germanium: Epitaxy and its applications
M Bosi, G Attolini - Progress in Crystal Growth and Characterization of …, 2010 - Elsevier
This paper reviews the most important properties of germanium, gives an insight into the
newer techniques and technology for the growth of epitaxial Ge thin layers and focuses on …
newer techniques and technology for the growth of epitaxial Ge thin layers and focuses on …
Plasmon-induced carrier polarization in semiconductor nanocrystals
Spintronics and valleytronics are emerging quantum electronic technologies that rely on
using electron spin and multiple extrema of the band structure (valleys), respectively, as …
using electron spin and multiple extrema of the band structure (valleys), respectively, as …
Giant unidirectional spin Hall magnetoresistance in topological insulator–ferromagnetic semiconductor heterostructures
NH Duy Khang, PN Hai - Journal of Applied Physics, 2019 - pubs.aip.org
The unidirectional spin Hall magnetoresistance (USMR) is one of the most complex spin-
dependent transport phenomena in ferromagnet/nonmagnet bilayers, which involves spin …
dependent transport phenomena in ferromagnet/nonmagnet bilayers, which involves spin …