Dilute ferromagnetic semiconductors: Physics and spintronic structures

T Dietl, H Ohno - Reviews of Modern Physics, 2014 - APS
This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …

Spin-dependent phenomena and device concepts explored in (Ga, Mn) As

T Jungwirth, J Wunderlich, V Novák, K Olejník… - Reviews of Modern …, 2014 - APS
Over the past two decades, the research of (Ga, Mn) As has led to a deeper understanding
of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …

Enhancing the Curie temperature of ferromagnetic semiconductor (Ga, Mn) As to 200 K via nanostructure engineering

L Chen, X Yang, F Yang, J Zhao, J Misuraca… - Nano …, 2011 - ACS Publications
We demonstrate by magneto-transport measurements that a Curie temperature as high as
200 K can be obtained in nanostructures of (Ga, Mn) As. Heavily Mn-doped (Ga, Mn) As …

New diluted ferromagnetic semiconductor with Curie temperature up to 180 K and isostructural to the '122'iron-based superconductors

K Zhao, Z Deng, XC Wang, W Han, JL Zhu, X Li… - Nature …, 2013 - nature.com
Diluted magnetic semiconductors have received much attention due to their potential
applications for spintronics devices. A prototypical system (Ga, Mn) As has been widely …

Achieving high curie temperature in (Ga, Mn) As

M Wang, RP Campion, AW Rushforth… - Applied Physics …, 2008 - pubs.aip.org
We study the effects of growth temperature, Ga: As ratio, and postgrowth annealing
procedure on the Curie temperature TC of (Ga, Mn) As layers grown by molecular beam …

Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga, Mn) As films with high ferromagnetic transition temperature

L Chen, S Yan, PF Xu, J Lu, WZ Wang, JJ Deng… - Applied Physics …, 2009 - pubs.aip.org
We report the low-temperature magnetotransport behaviors of (Ga, Mn) As films with the
nominal Mn concentration x larger than 10%. The ferromagnetic transition temperature TC …

A review of thermal processing in the subsecond range: semiconductors and beyond

L Rebohle, S Prucnal, W Skorupa - Semiconductor Science and …, 2016 - iopscience.iop.org
Thermal processing in the subsecond range comprises modern, non-equilibrium annealing
techniques which allow various material modifications at the surface without affecting the …

Germanium: Epitaxy and its applications

M Bosi, G Attolini - Progress in Crystal Growth and Characterization of …, 2010 - Elsevier
This paper reviews the most important properties of germanium, gives an insight into the
newer techniques and technology for the growth of epitaxial Ge thin layers and focuses on …

Plasmon-induced carrier polarization in semiconductor nanocrystals

P Yin, Y Tan, H Fang, M Hegde… - Nature …, 2018 - nature.com
Spintronics and valleytronics are emerging quantum electronic technologies that rely on
using electron spin and multiple extrema of the band structure (valleys), respectively, as …

Giant unidirectional spin Hall magnetoresistance in topological insulator–ferromagnetic semiconductor heterostructures

NH Duy Khang, PN Hai - Journal of Applied Physics, 2019 - pubs.aip.org
The unidirectional spin Hall magnetoresistance (USMR) is one of the most complex spin-
dependent transport phenomena in ferromagnet/nonmagnet bilayers, which involves spin …