Direct evidence for stiffness threshold in chalcogenide glasses
X Feng, WJ Bresser, P Boolchand - Physical review letters, 1997 - APS
Raman scattering in Ge x X 1− x glasses, X= S or Se, reveals that the frequency of A 1
modes of corner-sharing Ge (X 1/2) 4 tetrahedra displays a discontinuous jump between x …
modes of corner-sharing Ge (X 1/2) 4 tetrahedra displays a discontinuous jump between x …
Electrical switching and short-range order in As-Te glasses
The local structural order in chalcogenide network glasses is known to change markedly at
two critical compositions, namely, the percolation and chemical thresholds. In the As x Te …
two critical compositions, namely, the percolation and chemical thresholds. In the As x Te …
Evidence concerning the effect of topology on electrical switching in chalcogenide network glasses
Electrical switching properties of Ge-As-Te glasses have been investigated over a wide
range of mean coordination numbers (< r>) in a single composition tie line. The results …
range of mean coordination numbers (< r>) in a single composition tie line. The results …
On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability …
KA Aly - Applied Physics A, 2015 - Springer
Different compositions of amorphous Sn x (GeSe) 100− x (0.0≤ x≤ 0.12 at.%) thin films
were deposited onto glass substrates by the thermal evaporation technique. The optical …
were deposited onto glass substrates by the thermal evaporation technique. The optical …
Glass formation in germanium telluride glasses containing metallic additives
Differential scanning calorimetric (DSC) studies have been carried out on germanium
telluride glasses containing Cu and Ag. Both CuxGe15Te85− x (2≤ x≤ 10) and …
telluride glasses containing Cu and Ag. Both CuxGe15Te85− x (2≤ x≤ 10) and …
Carrier-sign reversal in Bi-doped bulk amorphous semiconductors
KL Bhatia, G Parthasarathy, A Sharma, ESR Gopal - Physical Review B, 1988 - APS
A p− n transition in the electronic conduction in Bi-doped bulk amorphous semiconductors
Ge 20 Te 8 0− x Bi x at about x= 3.5 has been observed for the first time. n-type conduction …
Ge 20 Te 8 0− x Bi x at about x= 3.5 has been observed for the first time. n-type conduction …
Thickness dependence of optical parameters for Ge–Se–Te thin films
The present work deals with thickness dependent study of the thin films of Ge10Se90− xTex
(x= 0, 10) chalcogenide glasses. Bulk samples of Ge10Se90 and Ge10Se80Te10 have …
(x= 0, 10) chalcogenide glasses. Bulk samples of Ge10Se90 and Ge10Se80Te10 have …
Electrical properties of a-GexSe100-x
In general, the conductivity in chalcogenide glasses at higher temperatures is dominated by
band conduction (DC conduction). But, at lower temperatures, hop** conduction …
band conduction (DC conduction). But, at lower temperatures, hop** conduction …
Steady state and transient photoconductivity in amorphous thin films of Se100-xInx
The present paper reports on the steady state and transient photoconductivity in amorphous
thin films of Se 100-x In x (x= 5, 10, 15, 20, 30). It is observed that various electrical …
thin films of Se 100-x In x (x= 5, 10, 15, 20, 30). It is observed that various electrical …
Electrical switching and topological thresholds in Ge-Te and Si-Te glasses
Abstract Melt-quenched Ge x Te 100-x glasses and Si x Te 100-x glasses (15≤ x≤ 25)
have been found to exhibit memory switching, with threshold fields of the order of 4–11 …
have been found to exhibit memory switching, with threshold fields of the order of 4–11 …