Strategies and applications of generating spin polarization in organic semiconductors

K Meng, L Guo, X Sun - Nanoscale Horizons, 2023 - pubs.rsc.org
The advent of spintronics has undoubtedly revolutionized data storage, processing, and
sensing applications. Organic semiconductors (OSCs), characterized by long spin relaxation …

Energy level measurement for organic semiconductors

X Zhou, S Yang, Q Li, G Bai, C Wang… - Physical Chemistry …, 2024 - pubs.rsc.org
Along with the miniaturization and versatility of organic optoelectronic devices, it is desired
to achieve a profound comprehension of the charge transport mechanism and even the …

In‐Device Ballistic‐Electron‐Emission Spectroscopy for Accurately In Situ Map** Energy Level Alignment at Metal–Organic Semiconductors Interface

K Meng, R Zheng, X Gu, R Zhang, L Guo… - Advanced …, 2025 - Wiley Online Library
Energy level alignment at metal/organic semiconductors (OSCs) interface governs electronic
processes in organic electronics devices, making its precise determination essential for …

Tuning the charge flow between Marcus regimes in an organic thin-film device

A Atxabal, T Arnold, S Parui, S Hutsch… - Nature …, 2019 - nature.com
Marcus's theory of electron transfer, initially formulated six decades ago for redox reactions
in solution, is now of great importance for very diverse scientific communities. The molecular …

Accurate molecular recognition from the lowest unoccupied molecular orbital

X Zhou, S Yang, C Han - Scientific Reports, 2024 - nature.com
The quantification of the lowest unoccupied molecular orbital level (LUMO) for molecular
semiconductors is of great importance, because it determines the charge transport process …

Tuning the carrier injection barrier of hybrid metal–organic interfaces on rare earth-gold surface compounds

R Castrillo-Bodero, M Blanco-Rey, K Ali, JE Ortega… - Nanoscale, 2023 - pubs.rsc.org
Magnetic hybrid metal–organic interfaces possess a great potential in areas such as organic
spintronics and quantum information processing. However, tuning their carrier injection …

A novel method for interfacial energy gap determination

X Zhou, Y Chen, Q Li, S Yang, C Han - Scientific Reports, 2024 - nature.com
A precise quantification of energy gap for a molecular semiconductor is crucial. However,
there has always been a lack of a suitable method which results in an inaccurate …

Negative Magnetoresistance Behavior in Polymer Spin Valves Based on Donor− Acceptor Conjugated Molecules

N Zheng, X Wang, Y Zheng, D Li, Z Lin… - Advanced Materials …, 2020 - Wiley Online Library
Organic spin valves (OSVs) have become an essential building block of next‐generation
memory devices which focus on spin degree of transporting carriers. Meanwhile, negative …

A novel energy level detector for molecular semiconductors

X Zhou, J Zhang, G Bai, C Wang, W He… - Physical Chemistry …, 2022 - pubs.rsc.org
The multifunction of molecule-based devices is always achieved by improving their charge
transport characteristics. These characteristics depend strongly on the energy levels of …

Strain Effects on the energy-level alignment at metal/organic semiconductor interfaces

A Atxabal, SR McMillan… - … applied materials & …, 2019 - ACS Publications
Flexible and wearable devices are among the upcoming trends in the opto-electronics
market. Nevertheless, bendable devices should ensure the same efficiency and stability as …